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1N6470

Description
Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size228KB,3 Pages
ManufacturerBkc Semiconductors Inc.
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1N6470 Overview

Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon,

1N6470 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBkc Semiconductors Inc.
Reach Compliance Codeunknown
Other featuresTEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Minimum breakdown voltage6.5 V
Breakdown voltage nominal value6.5 V
Shell connectionISOLATED
Maximum clamping voltage11 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation3 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage6 V
Maximum reverse current5000 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL

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Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker Bkc Semiconductors Inc. Bkc Semiconductors Inc. Bkc Semiconductors Inc. Bkc Semiconductors Inc. Bkc Semiconductors Inc. Bkc Semiconductors Inc.
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Other features TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Minimum breakdown voltage 6.5 V 16.4 V 27 V 33 V 43.7 V 54 V
Breakdown voltage nominal value 6.5 V 16 V 27 V 33 V 44 V 54 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Maximum clamping voltage 11 V 26.5 V 41.4 V 47.5 V 63.5 V 78.5 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
JESD-609 code e0 e0 e0 e0 e0 e0
Maximum non-repetitive peak reverse power dissipation 1500 W 1500 W 1500 W 1500 W 1500 W 1500 W
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Package body material GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Maximum power dissipation 3 W 3 W 3 W 3 W 3 W 3 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 6 V 15 V 24 V 31 V 40 V 52 V
Maximum reverse current 5000 µA 1000 µA 100 µA 5 µA 5 µA 5 µA
surface mount NO NO NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL

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