1N6475 datasheet, PDF - EEWORLD Datasheet

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1N6475: DescriptionTrans Voltage Suppressor Diode, 1500W, 40V V(RWM), Unidirectional, 1 Element, Silicon,; CategoryDiscrete semiconductor diode; File Size228KB，3 Pages; ManufacturerBkc Semiconductors Inc.

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1N6475 Overview

Trans Voltage Suppressor Diode, 1500W, 40V V(RWM), Unidirectional, 1 Element, Silicon,

1N6475 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Bkc Semiconductors Inc.
Reach Compliance Code	unknown
Other features	TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Minimum breakdown voltage	43.7 V
Breakdown voltage nominal value	44 V
Shell connection	ISOLATED
Maximum clamping voltage	63.5 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-LALF-W2
JESD-609 code	e0
Maximum non-repetitive peak reverse power dissipation	1500 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	3 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	40 V
Maximum reverse current	5 µA
surface mount	NO
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	AXIAL

1N6475 Related Products

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Description	Trans Voltage Suppressor Diode, 1500W, 40V V(RWM), Unidirectional, 1 Element, Silicon,	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon,	Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Unidirectional, 1 Element, Silicon,	Trans Voltage Suppressor Diode, 1500W, 24V V(RWM), Unidirectional, 1 Element, Silicon,	Trans Voltage Suppressor Diode, 1500W, 31V V(RWM), Unidirectional, 1 Element, Silicon,	Trans Voltage Suppressor Diode, 1500W, 52V V(RWM), Unidirectional, 1 Element, Silicon,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Bkc Semiconductors Inc.	Bkc Semiconductors Inc.	Bkc Semiconductors Inc.	Bkc Semiconductors Inc.	Bkc Semiconductors Inc.	Bkc Semiconductors Inc.
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Other features	TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE	TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE	TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE	TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE	TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE	TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Minimum breakdown voltage	43.7 V	6.5 V	16.4 V	27 V	33 V	54 V
Breakdown voltage nominal value	44 V	6.5 V	16 V	27 V	33 V	54 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum clamping voltage	63.5 V	11 V	26.5 V	41.4 V	47.5 V	78.5 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
JESD-609 code	e0	e0	e0	e0	e0	e0
Maximum non-repetitive peak reverse power dissipation	1500 W	1500 W	1500 W	1500 W	1500 W	1500 W
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
polarity	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
Maximum power dissipation	3 W	3 W	3 W	3 W	3 W	3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	40 V	6 V	15 V	24 V	31 V	52 V
Maximum reverse current	5 µA	5000 µA	1000 µA	100 µA	5 µA	5 µA
surface mount	NO	NO	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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