BUK9E06-55A_15 datasheet, PDF - EEWORLD Datasheet

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BUK9E06-55A_15: DescriptionN-channel TrenchMOS logic level FET; File Size186KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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N-channel TrenchMOS logic level FET

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BUK9E06-55A

N-channel TrenchMOS logic level FET

Rev. 04 — 31 May 2010

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Q101 compliant

Suitable for logic level gate drive

sources

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V and 24 V loads

Automotive and general purpose

power switching

Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Symbol

tot

Quick reference data

Parameter

drain-source

voltage

drain current

total power

dissipation

drain-source

on-state

resistance

Conditions

≥

25 °C; T

≤

175 °C

= 5 V; T

= 25 °C;

see

Figure 3;

see

Figure 1

= 25 °C; see

Figure 2

[1]

Min

Typ

Max Unit

300

Static characteristics

DSon

= 10 V; I

= 25 A;

= 25 °C

= 4.5 V; I

= 25 A;

= 25 °C

= 5 V; I

= 25 A;

= 25 °C;

see

Figure 12;

see

Figure 13

Avalanche ruggedness

DS(AL)S

non-repetitive

= 75 A; V

sup

≤

55 V;

drain-source

= 50

Ω;

= 5 V;

avalanche energy T

j(init)

= 25 °C; unclamped

1.1

4.8

5.3

5.8

6.7

6.3

mΩ

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