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SR820

Description
8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC
CategoryDiscrete semiconductor    diode   
File Size51KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
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SR820 Overview

8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC

SR820 Parametric

Parameter NameAttribute value
MakerJinan Jing Heng Electronics
Reach Compliance Codeunknow
ECCN codeEAR99
R
SR820 THRU SR8200
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts
Forward Current - 8.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Metal silicon junction ,majority carrier conduction
Guard ring for overvoltage protection
Low power loss ,high efficiency
High current capability ,Low forward voltage drop
Single rectifier construction
JF
High surge capability
SR860
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260
°
C/10 seconds,
0.159(4.05)
0.140(3.55)
0.25"(6.35mm)from case
Component in accordance to RoHS 2011
/
65
/
EU
0.053(1.34)
0.047(1.20)
TO-220AC
0.185(4.70)
0.410(10.42)
0.161(4.10)
0.147(3.74)
DIA
0.113(2.88)
0.102(2.60)
0.283(7.20)
0.244(6.20)
0.175(4.44)
0.055(1.39)
0.045(1.14)
0.388(9.85)
0.610(15.50)
0.571(14.50)
PIN
1
2
1.161(29.50)
1.106(28.10)
0.560(14.22)
0.512(13.00)
0.037(0.94)
0.027(0.68)
0.023(0.58)
0.114(2.90)
0.098(2.50)
MECHANICAL DATA
Case: JEDEC TO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked
Mounting Position: Any
0.208(5.28)
0.192(4.88)
0.014(0.35)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
°
C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see Fig.1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 8.0 A(Notes 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Notes 1)
T
A
=25
°
C
T
A
=100
°
C
T
A
=125
°
C
SR
820
20
14
20
SR
830
30
21
30
SR
840
40
28
40
SR
860
60
42
60
8.0
150.0
SR
8100
100
70
100
SR
8150
150
105
150
SR
8200
200
140
200
Units
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θJC
T
J
T
STG
V
olts
V
olts
V
olts
A
mps
A
mps
0
.
60
200
5
-
0.75
0.85
0.90
50
-
5
0.95
V
olts
μA
m
A
°C/W
°C
°C
Typical thermal resistance (Notes 2)
Operating junction temperature range
Storage temperature range
2.5
-55 to+150
-55 to+150
Notes:
1.Pulse test: 300
s pulse width,1% duty cycle
2.Thermal resistance from junction to case
JINAN JINGHENG ELECTRONICS CO., LTD.
2
-
1
HTTP
://
WWW.JINGHENGGROUP.COM

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