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JANTX1N6641

Description
Rectifier Diode, 1 Element, 0.3A, 50V V(RRM), Silicon, HERMETIC SEALED GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size547KB,6 Pages
ManufacturerCobham Semiconductor Solutions
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JANTX1N6641 Overview

Rectifier Diode, 1 Element, 0.3A, 50V V(RRM), Silicon, HERMETIC SEALED GLASS PACKAGE-2

JANTX1N6641 Parametric

Parameter NameAttribute value
MakerCobham Semiconductor Solutions
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum output current0.3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
GuidelineMIL-19500/578
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.005 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Switching Diodes 1N6638 Series
1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643,
1N6638U & US, 1N6639U & US, 1N6640U & US,
1N6641U & US 1N6642U & US, 1N6643U & US
Features
• Available in JAN, JANS, JANTX, JANTXV
per MIL‐PRF‐19500/578 & /609
• Switching Diodes
• Non‐Cavity Glass Plackage
• Category I Metallurgically Bonded
Maximum Ratings
Operating Temperature: -65°C to +175°C
Storage Temperature:
Operating Current:
Derating:
Surge Current:
-65°C to +175°C
300mA
Thermal Resistance:
(R
ӨJEC
): U & US 40 °C/W maximum at L = 0”
See Figure 6
(R
ӨJL
): Leaded 150 °C/W maximum at L = .375”
See Figure 7
Thermal Impedance: (Z
ӨJX
): 25 °C/W maximum
See Figure 5
IFSM = 2.5A, half sine wave,
PW = 8.3ms
Electrical Specifications @ TA = + 25 ºC ( Unless Otherwise Specified )
VBR @ IR
TYPES
V(pk)
μA
V(pk)
VFR
V(pk)
1N6638, U & US
1N6639, U & US
1N6640, U & US
1N6641, U & US
1N6642, U & US
1N6643, U & US
150
100
75
75
100
75
100
10
10
10
100
100
125
75
50
50
75
50
5.0
5.0
5.0
5.0
5.0
5.0
tfr
ns
20
10
10
10
20
20
pF
2.5
2.5
2.5
3.0
5.0
5.0
pF
2.0
2.8
2.8
ns
4.5
4.0
4.0
5.0
5.0
6.0
nA dc
35
25
50
nA dc
500
100
100
100
500
500
μA dc
50
50
75
μA dc
100
90
90
90
100
100
VWRM
VFR / tfr @
IF = 200 mA
CT1
VR=0 V
CT2
VR=1.5 V
trr
IR1
IR = 10mA VR=VRWM
IF = 10mA TA = 150°C
IR2
VR=20V
TA = 150°C
IR3
VR=20V
IR4
VR = VRWM
VF @ IF
TYPES
V dc
(min)
1N6638, U & US
1N6639, U & US
1N6640, U & US
0.54
0.76
0.82
0.87
V dc
(max)
1.1
0.8
1.2
0.62
0.86
0.92
1.0
1.1
0.8
1.2
0.8
1.2
VF2 @ IF
TA = -55°C
V dc
(max)
1.2
1.3
-
1.1
1.2
1.2
1.4
IF
mA
(pulsed)
200
10
500
1
50
100
200
200
10
100
10
100
1N6641, U & US
1N6642, U & US
1N6643, U & US
Revision Date: 2/5/2013
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