ELM14828AA-N datasheet, PDF - EEWORLD Datasheet

ELM14828AA-N: DescriptionDual N-channel MOSFET; CategoryDiscrete semiconductor The transistor; File Size88KB，4 Pages; ManufacturerELM Technology Corporation

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ELM14828AA-N Overview

Dual N-channel MOSFET

Parameter Name	Attribute value
Maker	ELM Technology Corporation
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	4.5 A
Maximum drain-source on-resistance	0.056 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	20 A
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON

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