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TP28F512-120

Description
512K(64Kx8)CMOS FLASH MEMORY
Categorystorage    storage   
File Size2MB,30 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
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TP28F512-120 Overview

512K(64Kx8)CMOS FLASH MEMORY

TP28F512-120 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIntel
Parts packaging codeDIP
package instructionDIP, DIP32,.6
Contacts32
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time120 ns
Other features100000 ERASE/PROGRAM CYCLES
command user interfaceYES
Data pollingNO
Durability1000 Write/Erase Cycles
JESD-30 codeR-PDIP-T32
JESD-609 codee0
length41.91 mm
memory density524288 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals32
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP32,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage12 V
Certification statusNot Qualified
Maximum seat height4.83 mm
Maximum standby current0.0001 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width15.24 mm

TP28F512-120 Related Products

TP28F512-120 28F512 TN28F512-120 P28F512-120 P28F512-150 N28F512-150 N28F512-120
Description 512K(64Kx8)CMOS FLASH MEMORY 512K(64Kx8)CMOS FLASH MEMORY 512K(64Kx8)CMOS FLASH MEMORY 512K(64Kx8)CMOS FLASH MEMORY 512K(64Kx8)CMOS FLASH MEMORY 512K(64Kx8)CMOS FLASH MEMORY 512K(64Kx8)CMOS FLASH MEMORY
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible incompatible
Maker Intel - Intel Intel Intel Intel Intel
Parts packaging code DIP - QFJ DIP DIP QFJ QFJ
package instruction DIP, DIP32,.6 - 0.450 X 0.550 INCH, PLASTIC, LCC-32 DIP, DIP32,.6 DIP, DIP32,.6 QCCJ, LDCC32,.5X.6 QCCJ, LDCC32,.5X.6
Contacts 32 - 32 32 32 32 32
Reach Compliance Code unknow - unknow unknow unknow unknow unknow
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 120 ns - 120 ns 120 ns 150 ns 150 ns 120 ns
Other features 100000 ERASE/PROGRAM CYCLES - 100000 ERASE/PROGRAM CYCLES 100000 ERASE/PROGRAM CYCLES 100000 ERASE/PROGRAM CYCLES 100000 ERASE/PROGRAM CYCLES 100000 ERASE/PROGRAM CYCLES
command user interface YES - YES YES YES YES YES
Data polling NO - NO NO NO NO NO
Durability 1000 Write/Erase Cycles - 1000 Write/Erase Cycles 10000 Write/Erase Cycles 10000 Write/Erase Cycles 10000 Write/Erase Cycles 10000 Write/Erase Cycles
JESD-30 code R-PDIP-T32 - R-PQCC-J32 R-PDIP-T32 R-PDIP-T32 R-PQCC-J32 R-PQCC-J32
JESD-609 code e0 - e0 e0 e0 e0 e0
length 41.91 mm - 13.97 mm 41.91 mm 41.91 mm 13.97 mm 13.97 mm
memory density 524288 bi - 524288 bi 524288 bi 524288 bi 524288 bi 524288 bi
Memory IC Type FLASH - FLASH FLASH FLASH FLASH FLASH
memory width 8 - 8 8 8 8 8
Number of functions 1 - 1 1 1 1 1
Number of terminals 32 - 32 32 32 32 32
word count 65536 words - 65536 words 65536 words 65536 words 65536 words 65536 words
character code 64000 - 64000 64000 64000 64000 64000
Operating mode ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C - 85 °C 70 °C 70 °C 70 °C 70 °C
organize 64KX8 - 64KX8 64KX8 64KX8 64KX8 64KX8
Output characteristics 3-STATE - 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP - QCCJ DIP DIP QCCJ QCCJ
Encapsulate equivalent code DIP32,.6 - LDCC32,.5X.6 DIP32,.6 DIP32,.6 LDCC32,.5X.6 LDCC32,.5X.6
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE - CHIP CARRIER IN-LINE IN-LINE CHIP CARRIER CHIP CARRIER
Parallel/Serial PARALLEL - PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V - 5 V 5 V 5 V 5 V 5 V
Programming voltage 12 V - 12 V 12 V 12 V 12 V 12 V
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 4.83 mm - 3.55 mm 4.83 mm 4.83 mm 3.55 mm 3.55 mm
Maximum standby current 0.0001 A - 0.0001 A 0.0001 A 0.0001 A 0.0001 A 0.0001 A
Maximum slew rate 0.03 mA - 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA
Maximum supply voltage (Vsup) 5.5 V - 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V - 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V - 5 V 5 V 5 V 5 V 5 V
surface mount NO - YES NO NO YES YES
technology CMOS - CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL - INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE - J BEND THROUGH-HOLE THROUGH-HOLE J BEND J BEND
Terminal pitch 2.54 mm - 1.27 mm 2.54 mm 2.54 mm 1.27 mm 1.27 mm
Terminal location DUAL - QUAD DUAL DUAL QUAD QUAD
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
switch bit NO - NO NO NO NO NO
type NOR TYPE - NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE
width 15.24 mm - 11.43 mm 15.24 mm 15.24 mm 11.43 mm 11.43 mm

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