P28F512-150 datasheet, PDF - EEWORLD Datasheet

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P28F512-150: Description512K(64Kx8)CMOS FLASH MEMORY; Categorystorage storage; File Size2MB，30 Pages; ManufacturerIntel; Websitehttp://www.intel.com/

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P28F512-150 Overview

512K(64Kx8)CMOS FLASH MEMORY

P28F512-150 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Intel
Parts packaging code	DIP
package instruction	DIP, DIP32,.6
Contacts	32
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	150 ns
Other features	100000 ERASE/PROGRAM CYCLES
command user interface	YES
Data polling	NO
Durability	10000 Write/Erase Cycles
JESD-30 code	R-PDIP-T32
JESD-609 code	e0
length	41.91 mm
memory density	524288 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	32
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	12 V
Certification status	Not Qualified
Maximum seat height	4.83 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
type	NOR TYPE
width	15.24 mm

P28F512-150 Related Products

	P28F512-150	28F512	TP28F512-120	TN28F512-120	P28F512-120	N28F512-150	N28F512-120
Description	512K(64Kx8)CMOS FLASH MEMORY	512K(64Kx8)CMOS FLASH MEMORY	512K(64Kx8)CMOS FLASH MEMORY	512K(64Kx8)CMOS FLASH MEMORY	512K(64Kx8)CMOS FLASH MEMORY	512K(64Kx8)CMOS FLASH MEMORY	512K(64Kx8)CMOS FLASH MEMORY
Is it Rohs certified?	incompatible	-	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Intel	-	Intel	Intel	Intel	Intel	Intel
Parts packaging code	DIP	-	DIP	QFJ	DIP	QFJ	QFJ
package instruction	DIP, DIP32,.6	-	DIP, DIP32,.6	0.450 X 0.550 INCH, PLASTIC, LCC-32	DIP, DIP32,.6	QCCJ, LDCC32,.5X.6	QCCJ, LDCC32,.5X.6
Contacts	32	-	32	32	32	32	32
Reach Compliance Code	unknow	-	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	150 ns	-	120 ns	120 ns	120 ns	150 ns	120 ns
Other features	100000 ERASE/PROGRAM CYCLES	-	100000 ERASE/PROGRAM CYCLES	100000 ERASE/PROGRAM CYCLES	100000 ERASE/PROGRAM CYCLES	100000 ERASE/PROGRAM CYCLES	100000 ERASE/PROGRAM CYCLES
command user interface	YES	-	YES	YES	YES	YES	YES
Data polling	NO	-	NO	NO	NO	NO	NO
Durability	10000 Write/Erase Cycles	-	1000 Write/Erase Cycles	1000 Write/Erase Cycles	10000 Write/Erase Cycles	10000 Write/Erase Cycles	10000 Write/Erase Cycles
JESD-30 code	R-PDIP-T32	-	R-PDIP-T32	R-PQCC-J32	R-PDIP-T32	R-PQCC-J32	R-PQCC-J32
JESD-609 code	e0	-	e0	e0	e0	e0	e0
length	41.91 mm	-	41.91 mm	13.97 mm	41.91 mm	13.97 mm	13.97 mm
memory density	524288 bi	-	524288 bi	524288 bi	524288 bi	524288 bi	524288 bi
Memory IC Type	FLASH	-	FLASH	FLASH	FLASH	FLASH	FLASH
memory width	8	-	8	8	8	8	8
Number of functions	1	-	1	1	1	1	1
Number of terminals	32	-	32	32	32	32	32
word count	65536 words	-	65536 words	65536 words	65536 words	65536 words	65536 words
character code	64000	-	64000	64000	64000	64000	64000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	-	85 °C	85 °C	70 °C	70 °C	70 °C
organize	64KX8	-	64KX8	64KX8	64KX8	64KX8	64KX8
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	-	DIP	QCCJ	DIP	QCCJ	QCCJ
Encapsulate equivalent code	DIP32,.6	-	DIP32,.6	LDCC32,.5X.6	DIP32,.6	LDCC32,.5X.6	LDCC32,.5X.6
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	-	IN-LINE	CHIP CARRIER	IN-LINE	CHIP CARRIER	CHIP CARRIER
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	-	5 V	5 V	5 V	5 V	5 V
Programming voltage	12 V	-	12 V	12 V	12 V	12 V	12 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	4.83 mm	-	4.83 mm	3.55 mm	4.83 mm	3.55 mm	3.55 mm
Maximum standby current	0.0001 A	-	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A
Maximum slew rate	0.03 mA	-	0.03 mA	0.03 mA	0.03 mA	0.03 mA	0.03 mA
Maximum supply voltage (Vsup)	5.5 V	-	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	-	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	-	5 V	5 V	5 V	5 V	5 V
surface mount	NO	-	NO	YES	NO	YES	YES
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	-	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE	J BEND	THROUGH-HOLE	J BEND	J BEND
Terminal pitch	2.54 mm	-	2.54 mm	1.27 mm	2.54 mm	1.27 mm	1.27 mm
Terminal location	DUAL	-	DUAL	QUAD	DUAL	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
switch bit	NO	-	NO	NO	NO	NO	NO
type	NOR TYPE	-	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
width	15.24 mm	-	15.24 mm	11.43 mm	15.24 mm	11.43 mm	11.43 mm

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