2N6079E3 datasheet, PDF - EEWORLD Datasheet

2N6079E3: DescriptionPower Bipolar Transistor, 7A I(C), 350V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL CAN-3; CategoryDiscrete semiconductor The transistor; File Size58KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N6079E3 Overview

Power Bipolar Transistor, 7A I(C), 350V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL CAN-3

Parameter Name	Attribute value
Maker	Microsemi
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compliant
Maximum collector current (IC)	7 A
Collector-emitter maximum voltage	350 V
Minimum DC current gain (hFE)	12
JEDEC-95 code	TO-66
JESD-30 code	O-MBFM-P2
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON

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