3 A, 60 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
Parameter Name | Attribute value |
Number of terminals | 4 |
Minimum breakdown voltage | 60 V |
Processing package description | GREEN, PLASTIC PACKAGE-4 |
EU RoHS regulations | Yes |
state | ACTIVE |
packaging shape | Rectangle |
Package Size | SMALL OUTLINE |
surface mount | Yes |
Terminal form | GULL WING |
terminal coating | MATTE Tin |
Terminal location | pair |
Packaging Materials | Plastic/Epoxy |
structure | Single WITH BUILT-IN diode |
Shell connection | DRAIN |
Number of components | 1 |
transistor applications | switch |
Transistor component materials | silicon |
Channel type | P channel |
field effect transistor technology | Metal-OXIDE SEMICONDUCTOR |
operating mode | ENHANCEMENT |
Transistor type | universal power supply |
Maximum leakage current | 3 A |
Maximum drain on-resistance | 0.1250 ohm |
Maximum leakage current pulse | 13.7 A |