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ZXMP6A17G

Description
3 A, 60 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
Categorysemiconductor    Discrete semiconductor   
File Size417KB,8 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZXMP6A17G Overview

3 A, 60 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA

ZXMP6A17G Parametric

Parameter NameAttribute value
Number of terminals4
Minimum breakdown voltage60 V
Processing package descriptionGREEN, PLASTIC PACKAGE-4
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeP channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current3 A
Maximum drain on-resistance0.1250 ohm
Maximum leakage current pulse13.7 A

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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