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SCS110AG

Description
SiC Schottky Barrier Diodes
CategoryDiscrete semiconductor    diode   
File Size1MB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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SCS110AG Overview

SiC Schottky Barrier Diodes

SCS110AG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeTO-220AC
package instructionR-PSFM-T2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON CARBIDE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current40 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage600 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
SiC Schottky Barrier Diode
SCS110AG
Applications
Switching power supply
Dimensions
(Unit : mm)
Structure
Features
1)Shorter recovery time
2)Reduced temperature dependence
3)High-speed switching possible
Construction
Silicon carbide epitaxial planer type
ROHM :
TO-220AC
Absolute
maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive)
Reverse voltage (DC)
Continuous forward current (*1)
Forward current surge peak (60Hz 1cyc) (*2)
Junction temperature
Storage temperature
(*1)Tc=117°C max
(*2)PW=8.3ms sinusoidal
Symbol
V
RM
V
R
I
F
I
FSM
Tj
Tstg
Limits
600
600
10
40
150
55
to
150
Unit
V
V
A
A
°C
°C
Electrical
characteristics
(Ta=25°C)
Parameter
DC blocking voltage
Forward voltage
Reverse current
Total capacitance
Total capacitive charge
Switching time
Thermal resistance
Symbol
V
DC
V
F
I
R
C
Qc
tc
R
th(j-c)
Min.
600
-
-
-
-
-
-
-
Typ.
-
1.5
2.0
430
47
16
15
-
Max.
-
1.7
200
-
-
-
-
1.8
Unit
V
V
μA
pF
pF
nC
ns
°C/W
I
R
=0.2mA
I
F
=10A
V
R
=600V
Conditions
V
R
=1V,f=1MHz
V
R
=600V,f=1MHz
V
R
=400V,di/dt=350A/μs
V
R
=400V,di/dt=350A/μs
junction to case
www.rohm.com
©2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.A

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