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SUT507EF

Description
Epitaxial planar NPN silicon transistor
CategoryDiscrete semiconductor    The transistor   
File Size285KB,5 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
Download Datasheet Parametric View All

SUT507EF Overview

Epitaxial planar NPN silicon transistor

SUT507EF Parametric

Parameter NameAttribute value
MakerKODENSHI
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.15 A
Minimum DC current gain (hFE)70
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
surface mountYES
Nominal transition frequency (fT)80 MHz
SUT507EF
Epitaxial planar NPN silicon transistor
Description
Complex type bipolar transistor
Feature
Very small package save PCB area
Reduce quantity of parts and mounting cost
Two 2SC5343 chips in SOT-563F package
Package : SOT-563F
Ordering Information
Type NO.
SUT507EF
Marking
6X
Package Code
SOT-563F
: Year & Week Code
Equivalent circuit & PIN Connections
Equivalent Circuit
3
2
1
Tr2
Tr1
4
5
6
PIN Connections
1. Emitter 1
2. Emitter 2
3. Base 2
4. Collector 2
5. Base 1
6. Collector 1
Absolute Maximum Ratings
[Tr1, Tr2]
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
※:
Total rating
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
60
50
5
150
150
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
KSD-T5U001-001
1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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