APM2A01NFPC-TUG datasheet, PDF

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APM2A01NFPC-TUG: DescriptionPower Field-Effect Transistor, 65A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size287KB，12 Pages; ManufacturerAmerican Power Devices Inc.; Environmental Compliance

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APM2A01NFPC-TUG Overview

Power Field-Effect Transistor, 65A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN

APM2A01NFPC-TUG Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	American Power Devices Inc.
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	65 A
Maximum drain-source on-resistance	0.028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	260 A
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

APM2A01NFPC-TUG Preview

APM2A01NF/APM2A01NFP

N-Channel Enhancement Mode MOSFET

Features

•

200V/65A,

R

DS(ON)

= 28mΩ(max.) @ V

GS

= 10V

Reliable and Rugged

Lead Free and Green Devices Available

(RoHS Compliant)

Pin Description

SD

G

SD

G

Top View of TO-220

D

Top View of TO-220-FP

Applications

•

Synchronous Rectification.

Power Management in Inverter Systems.

G

S

N-Channel MOSFET

Ordering and Marking Information

APM2A01N

Assembly Material

Handling Code

Temperature Range

Package Code

APM2A01N F/FP : APM2A01N

XXXXX

Package Code

F : TO-220

FP : TO-220-FP

Operating Junction Temperature Range

C : -55 to 175

o

C

Handling Code

TU : Tube

Assembly Material

G : Halogen and Lead Free Device

XXXXX - Date Code

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-

tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements

of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to

mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous

material and total of Br and Cl does not exceed 1500ppm by weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and

advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright

©

ANPEC Electronics Corp.

Rev. A.1 - Jul., 2010

1

www.anpec.com.tw

APM2A01NF/APM2A01NFP

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

T

J

T

STG

I

S

I

DP

I

D

P

D

R

θJC

R

θJA

Drain-Source Voltage

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

300µs Pulse Drain Current Tested

Continuous Drain Current

Maximum Power Dissipation

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

T

C

=25°C

T

C

=25°C

T

C

=100°C

T

C

=25°C

T

C

=100°C

Parameter

Rating

200

±25

175

-55 to 175

80

260

65

50

300

150

0.5

62.5

Unit

Common Ratings

(T

A

=25°C Unless Otherwise Noted)

V

°C

A

W

°C/W

Electrical Characteristics

Symbol

Static Characteristics

BV

DSS

I

DSS

V

GS(th)

I

GSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Threshold Voltage

Gate Leakage Current

Parameter

(T

A

= 25°C Unless Otherwise Noted)

Test Conditions

APM2A01NF/NFP

Min.

Typ.

Max.

Unit

V

GS

=0V, I

DS

=250µA

V

DS

=160V, V

GS

=0V

T

J

=85°C

V

DS

=V

GS

, I

DS

=250µA

V

GS

=±25V, V

DS

=0V

200

-

2

-

3

-

23

-

1

30

4

±100

28

V

µA

V

nA

mΩ

V

ns

nC

R

DS(ON) a

Drain-Source On-state Resistance V

GS

=10V, I

DS

=30A

Diode Characteristics

V

SDa

t

rr

Q

rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

I

SD

=20A, V

GS

=0V

I

DS

=40A, dl

SD

/dt=100A/µs

-

0.8

110

550

1.1

-

Copyright

©

ANPEC Electronics Corp.

Rev. A.1 - Jul., 2010

2

www.anpec.com.tw

APM2A01NF/APM2A01NFP

Electrical Characteristics (Cont.)

Symbol

Parameter

(T

A

= 25°C Unless Otherwise Noted)

Test Conditions

APM2A01NF/NFP

Min.

Typ.

Max.

Unit

Dynamic Characteristics

b

R

G

C

iss

C

oss

C

rss

t

d(ON )

T

r

t

d(OFF)

T

f

Q

g

Q

gs

Q

gd

Gate Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

V

DD

=30V, R

L

=30Ω,

I

DS

=1A, V

GEN

=10V,

R

G

=6Ω

V

GS

=0V,V

DS

=0V,F=1MHz

V

GS

=0V,

V

DS

=30V,

Frequency=1.0MHz

-

1.5

3200

600

200

23

16

88

53

-

4160

-

41

29

158

146

ns

pF

Ω

Gate Charge Characteristics

b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

DS

=100V, V

GS

=10V,

I

DS

=30A

-

110

21

40

160

-

nC

Note a : Pulse test ; pulse width≤300

µ

s, duty cycle≤2%.

Note b : Guaranteed by design, not subject to production testing.

Copyright

©

ANPEC Electronics Corp.

Rev. A.1 - Jul., 2010

3

www.anpec.com.tw

APM2A01NF/APM2A01NFP

Typical Operating Characteristics

Power Dissipation

350

300

250

70

60

50

40

30

20

10

Drain Current

200

150

100

50

0

T

C

=25 C

0

20 40 60 80 100 120 140 160 180 200

o

I

D

- Drain Current (A)

P

tot

- Power (W)

0

T

C

=25 C,V

G

=10V

0

20 40 60 80 100 120 140 160 180 200

o

T

j

- Junction Temperature (°C)

T

j

- Junction Temperature (°C)

Safe Operation Area

Normalized Transient Thermal Resistance

1000

2

1

Thermal Transient Impedance

Duty = 0.5

0.2

0.1

1ms

I

D

- Drain Current (A)

Lim

it

100

Rd

s(o

n)

10ms

100ms

0.1

0.02

0.01

0.05

10

1s

1

DC

0.01

Single Pulse

Mounted on minimum pad

o

R

θ

JA

:62.5 C/W

0.1

0.01

T

C

=25 C

O

0.1

1

10

100

1000

1E-3

1E-4

1E-3

0.01

0.1

1

10

100

V

DS

- Drain - Source Voltage (V)

Square Wave Pulse Duration (sec)

Copyright

©

ANPEC Electronics Corp.

Rev. A.1 - Jul., 2010

4

www.anpec.com.tw

APM2A01NF/APM2A01NFP

Typical Operating Characteristics (Cont.)

Output Characteristics

100

90

80

V

GS

= 5.5,6,7,8,9,10V

36

34

Drain-Source On Resistance

R

DS(ON)

- On - Resistance (mΩ)

32

30

28

26

24

22

20

18

16

14

V

GS

=10V

I

D

- Drain Current (A)

70

60

50

40

30

20

10

0

1

2

3

4.5V

5V

4

5

0

20

40

60

80

100

V

DS

- Drain - Source Voltage (V)

I

D

- Drain Current (A)

Gate-Source On Resistance

44

I

DS

=30A

40

1.4

1.6

Gate Threshold Voltage

I

DS

=250

µ

A

R

DS(ON)

- On - Resistance (mΩ)

Normalized Threshold Voltage

36

32

28

24

20

16

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-50 -25

3

4

5

6

7

8

9

10

0

25

50

75 100 125 150 175

V

GS

- Gate - Source Voltage (V)

T

j

- Junction Temperature (°C)

Copyright

©

ANPEC Electronics Corp.

Rev. A.1 - Jul., 2010

5

www.anpec.com.tw

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APM2A01NFPC-TUG Related Products

	APM2A01NFPC-TUG	APM2A01NFC-TUG
Description	Power Field-Effect Transistor, 65A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN	Power Field-Effect Transistor, 65A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC PACKAGE-3
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	American Power Devices Inc.	American Power Devices Inc.
Parts packaging code	TO-220AB	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V
Maximum drain current (ID)	65 A	65 A
Maximum drain-source on-resistance	0.028 Ω	0.028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	260 A	260 A
surface mount	NO	NO
Terminal surface	MATTE TIN	MATTE TIN
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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