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Datasheet> All Categories > Discrete semiconductor> The transistor> APM2A01NFC-TUG
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APM2A01NFC-TUG

Description
Power Field-Effect Transistor, 65A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size287KB，12 Pages
ManufacturerAmerican Power Devices Inc.
Environmental Compliance  
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APM2A01NFC-TUG Overview

Power Field-Effect Transistor, 65A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC PACKAGE-3

APM2A01NFC-TUG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerAmerican Power Devices Inc.
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)65 A
Maximum drain-source on-resistance0.028 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)260 A
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

APM2A01NFC-TUG Preview

APM2A01NF/APM2A01NFP
N-Channel Enhancement Mode MOSFET
Features
•
•
•
200V/65A,
R
DS(ON)
= 28mΩ(max.) @ V
GS
= 10V
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
SD
G
SD
G
Top View of TO-220
D
Top View of TO-220-FP
Applications
•
•
Synchronous Rectification.
Power Management in Inverter Systems.
G
S
N-Channel MOSFET
Ordering and Marking Information
APM2A01N
Assembly Material
Handling Code
Temperature Range
Package Code
APM2A01N F/FP : APM2A01N
XXXXX
Package Code
F : TO-220
FP : TO-220-FP
Operating Junction Temperature Range
C : -55 to 175
o
C
Handling Code
TU : Tube
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - Jul., 2010
1
www.anpec.com.tw
APM2A01NF/APM2A01NFP
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
P
D
R
θJC
R
θJA
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
300µs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
Parameter
Rating
200
±25
175
-55 to 175
80
260
65
50
300
150
0.5
62.5
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
°C
°C
A
A
A
W
°C/W
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Parameter
(T
A
= 25°C Unless Otherwise Noted)
Test Conditions
APM2A01NF/NFP
Min.
Typ.
Max.
Unit
V
GS
=0V, I
DS
=250µA
V
DS
=160V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
200
-
-
2
-
-
-
-
-
3
-
23
-
1
30
4
±100
28
V
µA
V
nA
mΩ
V
ns
nC
R
DS(ON) a
Drain-Source On-state Resistance V
GS
=10V, I
DS
=30A
Diode Characteristics
V
SDa
t
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=20A, V
GS
=0V
I
DS
=40A, dl
SD
/dt=100A/µs
-
-
-
0.8
110
550
1.1
-
-
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - Jul., 2010
2
www.anpec.com.tw
APM2A01NF/APM2A01NFP
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
A
= 25°C Unless Otherwise Noted)
Test Conditions
APM2A01NF/NFP
Min.
Typ.
Max.
Unit
Dynamic Characteristics
b
R
G
C
iss
C
oss
C
rss
t
d(ON )
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=30V, R
L
=30Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=30V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
1.5
3200
600
200
23
16
88
53
-
4160
-
-
41
29
158
146
ns
pF
Ω
Gate Charge Characteristics
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=100V, V
GS
=10V,
I
DS
=30A
-
-
-
110
21
40
160
-
-
nC
Note a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - Jul., 2010
3
www.anpec.com.tw
APM2A01NF/APM2A01NFP
Typical Operating Characteristics
Power Dissipation
350
300
250
70
60
50
40
30
20
10
Drain Current
200
150
100
50
0
T
C
=25 C
0
20 40 60 80 100 120 140 160 180 200
o
I
D
- Drain Current (A)
P
tot
- Power (W)
0
T
C
=25 C,V
G
=10V
0
20 40 60 80 100 120 140 160 180 200
o
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
1000
2
1
Thermal Transient Impedance
Duty = 0.5
0.2
0.1
1ms
I
D
- Drain Current (A)
Lim
it
100
Rd
s(o
n)
10ms
100ms
0.1
0.02
0.01
0.05
10
1s
1
DC
0.01
Single Pulse
Mounted on minimum pad
o
R
θ
JA
:62.5 C/W
0.1
0.01
T
C
=25 C
O
0.1
1
10
100
1000
1E-3
1E-4
1E-3
0.01
0.1
1
10
100
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - Jul., 2010
4
www.anpec.com.tw
APM2A01NF/APM2A01NFP
Typical Operating Characteristics (Cont.)
Output Characteristics
100
90
80
V
GS
= 5.5,6,7,8,9,10V
36
34
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
32
30
28
26
24
22
20
18
16
14
V
GS
=10V
I
D
- Drain Current (A)
70
60
50
40
30
20
10
0
0
1
2
3
4.5V
5V
4
5
0
20
40
60
80
100
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Gate-Source On Resistance
44
I
DS
=30A
40
1.4
1.6
Gate Threshold Voltage
I
DS
=250
µ
A
R
DS(ON)
- On - Resistance (mΩ)
Normalized Threshold Voltage
36
32
28
24
20
16
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
3
4
5
6
7
8
9
10
0
25
50
75 100 125 150 175
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - Jul., 2010
5
www.anpec.com.tw
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APM2A01NFC-TUG Related Products

APM2A01NFC-TUG APM2A01NFPC-TUG
Description Power Field-Effect Transistor, 65A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC PACKAGE-3 Power Field-Effect Transistor, 65A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker American Power Devices Inc. American Power Devices Inc.
Parts packaging code TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V
Maximum drain current (ID) 65 A 65 A
Maximum drain-source on-resistance 0.028 Ω 0.028 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 260 A 260 A
surface mount NO NO
Terminal surface MATTE TIN MATTE TIN
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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