QS5U23
Transistor
2.5V Drive Pch+SBD MOS FET
QS5U23
Structure
Silicon P-channel MOS FET
Schottky Barrier DIODE
External dimensions
(Unit : mm)
TSMT5
1.0MAX
2.9
1.9
0.95 0.95
0.85
0.7
Features
1) The QS5U23 combines Pch MOS FET with a
Schottky barrier diode in a TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive(2.5V)
4) Built-in schottky barrier diode has low forward voltage.
(5)
(4)
1.6
2.8
0~0.1
(1)
(2)
(3)
0.4
0.16
Each lead has same dimensions
Abbreviated symbol : U23
Applications
Load switch , DC/DC conversion
Packaging specifications
Package
Type
Taping
TR
3000
Equivalent circuit
(5)
(4)
Code
Basic ordering unit
(pieces)
QS5U23
∗2
(1)ANODE
(2)SOURCE
(3)GATE
(4)DRAIN
(5)CATHODE
∗1
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
0.3~0.6
Rev.A
1/4
QS5U23
Transistor
Absolute maximum ratings
(Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
Tch
P
D
∗3
V
RM
V
R
I
F
I
FSM
Tj
P
D
Limits
−20
±12
±1.5
±6.0
−0.75
−3.0
150
0.9
30
20
0.5
2.0
150
0.7
1.25
−55
to +150
Unit
V
V
A
A
A
A
°C
W / ELEMENT
V
V
A
A
°C
W / ELEMENT
W / TOTAL
°C
∗2
∗3
P
D
∗3
Tstg
∗1
Pw≤10µs, Duty cycle≤1%
∗2
60Hz
•
1cyc.
∗3
Mounted on a ceramic board
Electrical characteristics
(Ta=25°C)
< MOSFET >
Parameter
Gate-source leakage
Symbol
I
GSS
Min.
−
−20
−
−0.7
−
−
Typ.
−
−
−
−
160
180
Max.
±10
−
−1
−2.0
200
240
Unit
µA
V
µA
V
mΩ
mΩ
Conditions
V
GS
=
±12V/
V
DS
=0V
I
D
=
−1mA/
V
GS
=0V
V
DS
=−20V/
V
GS
=0V
V
DS
=
−10V/
I
D
=
−1mA
I
D
=
−1.5A,
V
GS
=−4.5V
I
D
=
−1.5A,
V
GS
=−4V
Drain-source breakdown voltage
V
(BR)DSS
Zero gate voltage drain current
Gate threshold voltage
I
DSS
V
GS(th)
R
DS(on)
∗
Static drain−source
on−state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn−on delay time
Rise Time
−
Y
fs
∗
C
iss
C
oss
C
rss
t
d(on)
∗
t
r
∗
260
−
325
60
40
10
10
35
10
340
−
−
−
−
−
−
−
−
mΩ
S
pF
pF
pF
ns
ns
ns
ns
I
D
=
−0.75A,
V
GS
=−2.5V
V
DS
=
−10V,
I
D
=
−0.75A
V
DS
=
−10V
V
GS
=0V
f=1MHz
I
D
=
−0.75A
V
DD
−15
V
GS
=−4.5V
R
L
=20Ω
R
G
=10Ω
V
DD
1.0
−
−
−
−
−
−
−
Turn off delay time
Fall time
Total gate charge
Gate−source charge
t
d(off)
∗
t
f
∗
Qg
Qgs
Qgd
−
−
−
4.2
1.0
1.1
−
−
−
nC
nC
nC
−1
5V
V
GS
=−4.5V
I
D
=
−1.5A
Gate−drain charge
∗Pulsed
<Body diode (source−drain)>
Forward voltage
< Di >
Foward voltage drop
Reverse current
V
F
I
R
−
−
−
−
−
−
V
SD
−
−
−1.2
V
I
S
=
−0.75A/
V
GS
=0V
0.36
0.47
100
V
V
µA
I
F
=0.1A
I
F
=0.5A
V
R
=20V
Rev.A
2/4
QS5U23
Transistor
Electrical characteristic curves
10
Static Drain−Source On−State Resistance
R
DS
(on)[mΩ]
Drain Current :
−I
D
(A)
1
0.1
Ta=125°C
75°C
25°C
−25°C
100
Static Drain−Source On−State Resistance
R
DS
(on)[mΩ]
V
DS
=−10V
pulsed
1000
V
GS
=−4.5V
pulsed
1000
V
GS
=−4V
pulsed
Ta=125°C
75°C
25°C
−25
°C
100
Ta=125°C
75°C
25°C
−25°C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
0.1
1
10
10
0.1
1
10
Gate−Source Voltage
:
V
GS
[V]
Drain Current
: −I
D
[A]
Drain Current
: −I
D
[A]
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain−Source On−State
Resistance
vs. Drain Current
Fig.3 Static Drain−Source On−State
Resistance
vs. Drain Current
1000
Static Drain−Source On−State Resistance
R
DS
(on)[mΩ]
400
1000
Static Drain−Source On−State Resistance
R
DS
(on)[mΩ]
350
300
250
200
150
100
50
0
0
2
4
6
8
I
D=−
0.75A
−1.5A
100
Ta=125°C
75°C
25°C
−25°C
Static Drain-Source On−State Resistance
R
DS
(on)[mΩ]
V
GS
=−2.5V
pulsed
Ta=25 C
pulsed
Ta=25 C
pulsed
100
V
GS
=−2.5V
−4.0V
−4.5V
10
0.1
1
10
10
12
10
0.1
1
10
Drain Current
: −I
D
[A]
Gate−Source Voltage
: −V
GS
[V]
Drain Current
: −I
D
[A]
Fig.4 Static Drain−Source On−State
Resistance vs. Drain−Current
Fig.5 Static Drain−Source On−State
Resistance vs.Gate−Source Voltage
Fig.6 Static Drain−Source On−State
Resistance vs. Drain Current
10
Reverse Drain Current
: −I
DR
[A]
V
GS
=0V
pulsed
10000
Ta=25 C
f=1MHz
V
GS
=0V
1000
Ta=25 C
V
DD
=−15V
V
GS
=−4.5V
R
G
=10Ω
pulsed
Capacitance
:
C
[pF]
1
Ta=125°C
75°C
25°C
−25°C
1000
Switching Time
:
t
[ns]
100
t
d(off)
t
f
C
iss
100
0.1
10
t
d(on)
t
r
C
oss
C
rss
0.01
0
10
0.01
1
0.01
0.5
1.0
1.5
2.0
0.1
1
10
100
0.1
1
10
Source−Drain Voltage
: −V
SD
[V]
Drain−Source Voltage
: −V
DS
[V]
Drain Current
: −I
D
[A]
Fig.7 Reverse Drain Current
VS. Source-Drain Current
Fig.8 Typical Capactitance
vs. Drain−Source Voltage
Fig.9 Switching Characteristics
Rev.A
3/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Analogue and Mixed Signal
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