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TSC5302DCHC5

Description
High Voltage NPN Transistor with Diode
CategoryDiscrete semiconductor    The transistor   
File Size230KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSC5302DCHC5 Overview

High Voltage NPN Transistor with Diode

TSC5302DCHC5 Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codecompli
Maximum collector current (IC)2 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

TSC5302DCHC5 Related Products

TSC5302DCHC5 TSC5302DCPRO TSC5302D_10
Description High Voltage NPN Transistor with Diode High Voltage NPN Transistor with Diode High Voltage NPN Transistor with Diode
Maker Taiwan Semiconductor Taiwan Semiconductor -
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 -
Reach Compliance Code compli compli -
Maximum collector current (IC) 2 A 2 A -
Collector-emitter maximum voltage 400 V 400 V -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum DC current gain (hFE) 5 5 -
JEDEC-95 code TO-251 TO-252 -
JESD-30 code R-PSIP-T3 R-PSSO-G2 -
Number of components 1 1 -
Number of terminals 3 2 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form IN-LINE SMALL OUTLINE -
Polarity/channel type NPN NPN -
surface mount NO YES -
Terminal form THROUGH-HOLE GULL WING -
Terminal location SINGLE SINGLE -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
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