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OSC-0.3C

Description
NPN SILICON RF POWER TRANSISTOR
File Size12KB,1 Pages
ManufacturerASI [ASI Semiconductor, Inc]
Download Datasheet View All

OSC-0.3C Overview

NPN SILICON RF POWER TRANSISTOR

OSC-0.3C
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .138 2L FLG
DESCRIPTION:
The
ASI OSC-0.3C
is Designed for
General Purpose Oscillator
Applications up to 7.5 GHz.
A
B
FEATURES:
V
CC
= 12 V
Omnigold™
Metalization System
C
F
E
D
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
O
O
225 mA
25 V
5.0 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +200 C
30 C/W
O
O
O
O
DIM
A
B
C
D
E
F
MINIMUM
inches / mm
MAXIMUM
inches / mm
.025 / 0.635
.138 / 3.505
.275 / 6.985
.375 / 9.525
.031 / 0.787
.062 / 1.575
ORDER CODE: ASI10636
O
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
I
EBO
I
CBO
h
FE
C
OB
η
C
|
|
S21C|
P
OSC
2
T
C
= 25 C
NONETEST
CONDITIONS
I
C
= 1.0 mA
I
C
= 100
µA
I
EB
= 1.0 V
V
CB
= 15 V
V
CE
= 8.0 V
V
CB
= 10 V
V
CC
= 12 V
V
CE
= 8.0 V
V
CC
= 12 V
P
OUT
= 0.3 W
I
C
= 100 mA
I
C
= 120 mA
I
C
= 100 mA
f = 1.0 MHz
f = 7.5 GHz
f = 1.0 GHz
f = 7.5 GHz
MINIMUM TYPICAL MAXIMUM
16
25
2.0
500
20
200
1.5
22
4.0
320
UNITS
V
V
µ
A
µ
A
---
pF
%
dB
mW
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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