EEWORLDEEWORLDEEWORLD

Part Number

Search

68AL1101F

Description
RESISTOR, THIN FILM, 0.1W, 1%, 50ppm, 1100ohm, SURFACE MOUNT, 0202, CHIP
CategoryPassive components    The resistor   
File Size86KB,2 Pages
ManufacturerSpectrum Microwave
Download Datasheet Parametric View All

68AL1101F Overview

RESISTOR, THIN FILM, 0.1W, 1%, 50ppm, 1100ohm, SURFACE MOUNT, 0202, CHIP

68AL1101F Parametric

Parameter NameAttribute value
MakerSpectrum Microwave
package instructionCHIP
Reach Compliance Codeunknown
Manufacturer's serial number68
Installation featuresSURFACE MOUNT
Number of terminals2
Maximum operating temperature150 °C
Package shapeRECTANGULAR PACKAGE
method of packingTRAY
Rated power dissipation(P)0.1 W
Rated temperature70 °C
resistance1100 Ω
Resistor typeFIXED RESISTOR
size code0202
surface mountYES
technologyTHIN FILM
Temperature Coefficient50 ppm/°C
Terminal shapeONE SURFACE
Tolerance1%
Operating Voltage100 V
T
HIN
F
ILM
C
HIP
R
ESISTORS
68 Series 0.020”x0.020”
Satcon Electronics 68 series .020” x .020” Thin-film Chip Resistors are available in both top-contact
and back-contact versions in a wide range of resistances and tolerances. Values are available from
1 ohm to 500 Kohms. Both passivated nichrome and tantalum-nitride resistor versions are available.
Nichrome provides excellent stability and temperature coefficient in hermetic applications while
tantalum-nitride provides superior moisture-resistance for non-hermetic applications.
Electrical Specifications
Parameter
Power Rating
Life
Noise
High Temp Exposure
TCR (68AL, 68BCN)
TCR (68ALT, 68BCR)
Operating voltage
Moisture resistance
Thermal shock
Limit
100 mW
+/-0.2% max
-35 dB typ
+/-0.2% max
+/-50 ppm/C
-50 to -120 ppm/C
100 VDC max
+/-0.5% max
+/-0.5% max
Test conditions
(derated at 70 deg. to 0 mW @ 150 deg.)
1000 hours @ 125 degrees C
MIL-STD-202 method 308
100 hours at 150 degrees C
-55 to 125 degrees C
-55 to 125 degrees C
MIL-STD-202 method 106
MIL-STD-202 method 107
TypicalConfigurations
Values below 20 oh ms
Values from 20 to 200 ohms
Values above 200 ohms
Mechanical Specifications
Substrate
Bond pad metalization
Size
Thickness
Bond pad dimensions
Protective overcoat (passivation)
Back side
Silicon with 1 micron thermal oxide
Gold, 100 microinches
0.021 x .021 +/-.002 (0.53 x 0.53 mm +/- .05mm)
0.013 +/-.003 (0.33 +/-0.07 mm)
0.004 x .004 minimum (0.1 x 0.1 mm)
0.6 microns SiO2 (68AL & 68BCN versions only)
Lapped silicon (68AL, 68ALT), Gold (68BCN, 68BCR)
SatCon Electronics Inc.
Tel: 508-485-6350 Fax : 508-485-5168
165 Cedar Hill Street, Marlborough, Ma 01752
www.satconelectronics.com

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号