SIHL530STR-E3 datasheet, PDF - EEWORLD Datasheet

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SIHL530STR-E3: DescriptionPower MOSFET; CategoryDiscrete semiconductor The transistor; File Size307KB，10 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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SIHL530STR-E3 Overview

Power MOSFET

SIHL530STR-E3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	290 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	15 A
Maximum drain current (ID)	15 A
Maximum drain-source on-resistance	0.16 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	88 W
Maximum pulsed drain current (IDM)	60 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

SIHL530STR-E3 Related Products

	SIHL530STR-E3	IRL530S	SIHL530S	SIHL530STRR-GE3	IRL530STRL
Description	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	MOSFET N-CH 100V 15A D2PAK
Is it lead-free?	Lead free	-	Contains lead	Lead free	-
Is it Rohs certified?	conform to	incompatible	incompatible	conform to	-
Parts packaging code	D2PAK	D2PAK	D2PAK	D2PAK	-
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	-
Contacts	4	3	4	4	-
Reach Compliance Code	unknow	unknow	unknow	unknow	-
ECCN code	EAR99	EAR99	EAR99	EAR99	-
Other features	AVALANCHE RATED	LOGIC LEVEL COMPATIBLE	AVALANCHE RATED	AVALANCHE RATED	-
Avalanche Energy Efficiency Rating (Eas)	290 mJ	-	290 mJ	290 mJ	-
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V	-
Maximum drain current (Abs) (ID)	15 A	15 A	15 A	15 A	-
Maximum drain current (ID)	15 A	15 A	15 A	15 A	-
Maximum drain-source on-resistance	0.16 Ω	0.16 Ω	0.16 Ω	0.16 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	TO-263AB	TO-263AB	TO-263AB	TO-263AB	-
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	-
Number of components	1	1	1	1	-
Number of terminals	2	2	2	2	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	240	260	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
Maximum power dissipation(Abs)	88 W	88 W	88 W	88 W	-
Maximum pulsed drain current (IDM)	60 A	-	60 A	60 A	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
surface mount	YES	YES	YES	YES	-
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	-
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	40	NOT SPECIFIED	30	40	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-
Base Number Matches	1	-	1	1	-

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