Power MOSFET
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Parts packaging code | D2PAK |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 4 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 290 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 15 A |
| Maximum drain current (ID) | 15 A |
| Maximum drain-source on-resistance | 0.16 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 240 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 88 W |
| Maximum pulsed drain current (IDM) | 60 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| SIHL530S | IRL530S | SIHL530STR-E3 | SIHL530STRR-GE3 | IRL530STRL | |
|---|---|---|---|---|---|
| Description | Power MOSFET | Power MOSFET | Power MOSFET | Power MOSFET | MOSFET N-CH 100V 15A D2PAK |
| Is it lead-free? | Contains lead | - | Lead free | Lead free | - |
| Is it Rohs certified? | incompatible | incompatible | conform to | conform to | - |
| Parts packaging code | D2PAK | D2PAK | D2PAK | D2PAK | - |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | - |
| Contacts | 4 | 3 | 4 | 4 | - |
| Reach Compliance Code | unknow | unknow | unknow | unknow | - |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | - |
| Other features | AVALANCHE RATED | LOGIC LEVEL COMPATIBLE | AVALANCHE RATED | AVALANCHE RATED | - |
| Avalanche Energy Efficiency Rating (Eas) | 290 mJ | - | 290 mJ | 290 mJ | - |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN | - |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - |
| Minimum drain-source breakdown voltage | 100 V | 100 V | 100 V | 100 V | - |
| Maximum drain current (Abs) (ID) | 15 A | 15 A | 15 A | 15 A | - |
| Maximum drain current (ID) | 15 A | 15 A | 15 A | 15 A | - |
| Maximum drain-source on-resistance | 0.16 Ω | 0.16 Ω | 0.16 Ω | 0.16 Ω | - |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| JEDEC-95 code | TO-263AB | TO-263AB | TO-263AB | TO-263AB | - |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | - |
| Number of components | 1 | 1 | 1 | 1 | - |
| Number of terminals | 2 | 2 | 2 | 2 | - |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | - |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | - |
| Peak Reflow Temperature (Celsius) | 240 | NOT SPECIFIED | 260 | 260 | - |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
| Maximum power dissipation(Abs) | 88 W | 88 W | 88 W | 88 W | - |
| Maximum pulsed drain current (IDM) | 60 A | - | 60 A | 60 A | - |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
| surface mount | YES | YES | YES | YES | - |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | - |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | - |
| Maximum time at peak reflow temperature | 30 | NOT SPECIFIED | 40 | 40 | - |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | - |
| Base Number Matches | 1 | - | 1 | 1 | - |
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