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SI4511DY_09

Description
7200 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size141KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SI4511DY_09 Overview

7200 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET

SI4511DY_09 Parametric

Parameter NameAttribute value
Number of terminals8
Minimum breakdown voltage20 V
Processing package descriptionROHS COMPLIANT, SOP-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of components2
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL AND P-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Maximum leakage current7.2 A
Maximum drain on-resistance0.0145 ohm

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