10N40L-TA3-T datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 10N40L-TA3-T

10N40L-TA3-T: Description10.5A, 400V N-CHANNEL POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size168KB，4 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

Download Datasheet Parametric Compare View All

10N40L-TA3-T Overview

10.5A, 400V N-CHANNEL POWER MOSFET

10N40L-TA3-T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	360 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	10.5 A
Maximum drain-source on-resistance	0.53 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	42 A
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

Preview

Download Datasheet

View All

UNISONIC TECHNOLOGIES CO., LTD

10N40

Preliminary

Power MOSFET

10.5A, 400V N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC

10N40

is an N-channel mode power MOSFET using

UTC’ s advanced technology to provide customers with planar stripe

and DMOS technology. This technology specializes in allowing a

minimum on-state resistance and superior switching performance. It

also can withstand high energy pulse in the avalanche and

commutation mode.

The UTC

10N40

is universally applied in electronic lamp ballast

based on half bridge topology and high efficient switched mode

power supply.

TO-220

TO-220F1

FEATURES

* High switching speed

* R

DS(ON)

=0.65Ω @ V

=10V

* 100% avalanche tested

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

10N40L-TA3-T

10N40G-TA3-T

10N40L-TF1-T

10N40G-TF1-T

Note: Pin Assignment: G: Gate D: Drain

S: Source

Package

TO-220

TO-220F1

Pin Assignment

Packing

Tube

www.unisonic.com.tw

1 of 4

QW-R502-549.b

10N40L-TA3-T Related Products

	10N40L-TA3-T	10N40	10N40G-TA3-T	10N40G-TF1-T	10N40L-TF1-T
Description	10.5A, 400V N-CHANNEL POWER MOSFET	10.5A, 400V N-CHANNEL POWER MOSFET	10.5A, 400V N-CHANNEL POWER MOSFET	10.5A, 400V N-CHANNEL POWER MOSFET	10.5A, 400V N-CHANNEL POWER MOSFET
Is it Rohs certified?	conform to	-	conform to	conform to	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD	-	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	TO-220AB	-	TO-220AB	TO-220AB	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	-	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	-	3	3	3
Reach Compliance Code	compliant	-	compliant	compli	compli
Avalanche Energy Efficiency Rating (Eas)	360 mJ	-	360 mJ	360 mJ	360 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V	-	400 V	400 V	400 V
Maximum drain current (ID)	10.5 A	-	10.5 A	10.5 A	10.5 A
Maximum drain-source on-resistance	0.53 Ω	-	0.53 Ω	0.53 Ω	0.53 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	-	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	-	1	1	1
Number of terminals	3	-	3	3	3
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	42 A	-	42 A	42 A	42 A
surface mount	NO	-	NO	NO	NO
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON

Recommended Resources

STR5412 power circuit

External circuit structure of CPU clock signal generation circuit b

AC voltmeter circuit composed of milliammeter b

SL517 voice controlled relay

Simple diagram of trickle charging method

Switching power supply high voltage constant current source circuit diagram

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components