10.5A, 400V N-CHANNEL POWER MOSFET
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | UNISONIC TECHNOLOGIES CO.,LTD |
| Parts packaging code | TO-220AB |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| Avalanche Energy Efficiency Rating (Eas) | 360 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 400 V |
| Maximum drain current (ID) | 10.5 A |
| Maximum drain-source on-resistance | 0.53 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 42 A |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| 10N40G-TA3-T | 10N40 | 10N40G-TF1-T | 10N40L-TA3-T | 10N40L-TF1-T | |
|---|---|---|---|---|---|
| Description | 10.5A, 400V N-CHANNEL POWER MOSFET | 10.5A, 400V N-CHANNEL POWER MOSFET | 10.5A, 400V N-CHANNEL POWER MOSFET | 10.5A, 400V N-CHANNEL POWER MOSFET | 10.5A, 400V N-CHANNEL POWER MOSFET |
| Is it Rohs certified? | conform to | - | conform to | conform to | conform to |
| Maker | UNISONIC TECHNOLOGIES CO.,LTD | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD |
| Parts packaging code | TO-220AB | - | TO-220AB | TO-220AB | TO-220AB |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 | - | 3 | 3 | 3 |
| Reach Compliance Code | compliant | - | compli | compliant | compli |
| Avalanche Energy Efficiency Rating (Eas) | 360 mJ | - | 360 mJ | 360 mJ | 360 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 400 V | - | 400 V | 400 V | 400 V |
| Maximum drain current (ID) | 10.5 A | - | 10.5 A | 10.5 A | 10.5 A |
| Maximum drain-source on-resistance | 0.53 Ω | - | 0.53 Ω | 0.53 Ω | 0.53 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB | - | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 code | R-PSFM-T3 | - | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | - | 1 | 1 | 1 |
| Number of terminals | 3 | - | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | - | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 42 A | - | 42 A | 42 A | 42 A |
| surface mount | NO | - | NO | NO | NO |
| Terminal form | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | - | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | - | SILICON | SILICON | SILICON |
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