10N40 datasheet, PDF - EEWORLD Datasheet

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10N40: Description10.5A, 400V N-CHANNEL POWER MOSFET; File Size168KB，4 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/

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10N40 Overview

10.5A, 400V N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD

10N40

Preliminary

Power MOSFET

10.5A, 400V N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC

10N40

is an N-channel mode power MOSFET using

UTC’ s advanced technology to provide customers with planar stripe

and DMOS technology. This technology specializes in allowing a

minimum on-state resistance and superior switching performance. It

also can withstand high energy pulse in the avalanche and

commutation mode.

The UTC

10N40

is universally applied in electronic lamp ballast

based on half bridge topology and high efficient switched mode

power supply.

TO-220

TO-220F1

FEATURES

* High switching speed

* R

DS(ON)

=0.65Ω @ V

=10V

* 100% avalanche tested

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

10N40L-TA3-T

10N40G-TA3-T

10N40L-TF1-T

10N40G-TF1-T

Note: Pin Assignment: G: Gate D: Drain

S: Source

Package

TO-220

TO-220F1

Pin Assignment

Packing

Tube

www.unisonic.com.tw

1 of 4

QW-R502-549.b

10N40 Related Products

	10N40	10N40G-TA3-T	10N40G-TF1-T	10N40L-TA3-T	10N40L-TF1-T
Description	10.5A, 400V N-CHANNEL POWER MOSFET	10.5A, 400V N-CHANNEL POWER MOSFET	10.5A, 400V N-CHANNEL POWER MOSFET	10.5A, 400V N-CHANNEL POWER MOSFET	10.5A, 400V N-CHANNEL POWER MOSFET
Is it Rohs certified?	-	conform to	conform to	conform to	conform to
Maker	-	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	-	TO-220AB	TO-220AB	TO-220AB	TO-220AB
package instruction	-	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	-	3	3	3	3
Reach Compliance Code	-	compliant	compli	compliant	compli
Avalanche Energy Efficiency Rating (Eas)	-	360 mJ	360 mJ	360 mJ	360 mJ
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	400 V	400 V	400 V	400 V
Maximum drain current (ID)	-	10.5 A	10.5 A	10.5 A	10.5 A
Maximum drain-source on-resistance	-	0.53 Ω	0.53 Ω	0.53 Ω	0.53 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	-	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	-	1	1	1	1
Number of terminals	-	3	3	3	3
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	-	42 A	42 A	42 A	42 A
surface mount	-	NO	NO	NO	NO
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	-	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON

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