25A, 60V N-CHANNEL POWER MOSFET
25N06_11 | 25N06G-TN3-R | 25N06G-TN3-T | 25N06L-TN3-R | 25N06L-TN3-T | |
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Description | 25A, 60V N-CHANNEL POWER MOSFET | 25A, 60V N-CHANNEL POWER MOSFET | 25A, 60V N-CHANNEL POWER MOSFET | 25A, 60V N-CHANNEL POWER MOSFET | 25A, 60V N-CHANNEL POWER MOSFET |
Is it Rohs certified? | - | conform to | conform to | conform to | conform to |
Maker | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD |
Parts packaging code | - | TO-252 | TO-252 | TO-252 | TO-252 |
package instruction | - | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
Contacts | - | 4 | 4 | 4 | 4 |
Reach Compliance Code | - | compli | compli | compli | compli |
ECCN code | - | EAR99 | EAR99 | EAR99 | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | - | 100 mJ | 100 mJ | 100 mJ | 100 mJ |
Configuration | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | - | 60 V | 60 V | 60 V | 60 V |
Maximum drain current (ID) | - | 25 A | 25 A | 25 A | 25 A |
Maximum drain-source on-resistance | - | 0.065 Ω | 0.065 Ω | 0.065 Ω | 0.065 Ω |
FET technology | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | - | TO-252 | TO-252 | TO-252 | TO-252 |
JESD-30 code | - | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
Number of components | - | 1 | 1 | 1 | 1 |
Number of terminals | - | 2 | 2 | 2 | 2 |
Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum pulsed drain current (IDM) | - | 100 A | 100 A | 100 A | 100 A |
surface mount | - | YES | YES | YES | YES |
Terminal form | - | GULL WING | GULL WING | GULL WING | GULL WING |
Terminal location | - | SINGLE | SINGLE | SINGLE | SINGLE |
Maximum time at peak reflow temperature | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
transistor applications | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | - | SILICON | SILICON | SILICON | SILICON |