EEWORLDEEWORLDEEWORLD

Part Number

Search

25N06_11

Description
25A, 60V N-CHANNEL POWER MOSFET
File Size179KB,6 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Compare View All

25N06_11 Overview

25A, 60V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
25N06
Preliminary
Power MOSFET
25A, 60V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
25N06
is an N-channel enhancement mode power
MOSFET, which provides low gate charge, avalanche rugged
technology, and so on.
The UTC
25N06
is universally applied in DC-DC & DC-AC
converters, motor control, high current, high speed switching,
solenoid and relay drivers, regulators, audio amplifiers, automotive
environment.
FEATURES
* Low Gate Charge
* R
DS(on)
= 0.048
(TYP.)
* Avalanche Rugged Technology
* 100% Avalanche Tested
* Repetitive Avalanche at 100°C
* High Current Capability
* Operating Temperature: 150°C
* Application Oriented Characterization
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
25N06L-TA3-T
25N06G-TA3-T
25N06L-TN3-T
25N06G-TN3-T
25N06L-TN3-R
25N06G-TN3-R
Note: Pin Assignment: G: Gate, D: Drain, S: Source
Package
TO-220
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-450.b

25N06_11 Related Products

25N06_11 25N06G-TN3-R 25N06G-TN3-T 25N06L-TN3-R 25N06L-TN3-T
Description 25A, 60V N-CHANNEL POWER MOSFET 25A, 60V N-CHANNEL POWER MOSFET 25A, 60V N-CHANNEL POWER MOSFET 25A, 60V N-CHANNEL POWER MOSFET 25A, 60V N-CHANNEL POWER MOSFET
Is it Rohs certified? - conform to conform to conform to conform to
Maker - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code - TO-252 TO-252 TO-252 TO-252
package instruction - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts - 4 4 4 4
Reach Compliance Code - compli compli compli compli
ECCN code - EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - 100 mJ 100 mJ 100 mJ 100 mJ
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 60 V 60 V 60 V 60 V
Maximum drain current (ID) - 25 A 25 A 25 A 25 A
Maximum drain-source on-resistance - 0.065 Ω 0.065 Ω 0.065 Ω 0.065 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-252 TO-252 TO-252 TO-252
JESD-30 code - R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components - 1 1 1 1
Number of terminals - 2 2 2 2
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - 100 A 100 A 100 A 100 A
surface mount - YES YES YES YES
Terminal form - GULL WING GULL WING GULL WING GULL WING
Terminal location - SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号