25N06L-TN3-R datasheet, PDF - EEWORLD Datasheet

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25N06L-TN3-R: Description25A, 60V N-CHANNEL POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size179KB，6 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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25N06L-TN3-R Overview

25A, 60V N-CHANNEL POWER MOSFET

25N06L-TN3-R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	100 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	25 A
Maximum drain-source on-resistance	0.065 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	100 A
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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UNISONIC TECHNOLOGIES CO., LTD

25N06

Preliminary

Power MOSFET

25A, 60V N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC

25N06

is an N-channel enhancement mode power

MOSFET, which provides low gate charge, avalanche rugged

technology, and so on.

The UTC

25N06

is universally applied in DC-DC & DC-AC

converters, motor control, high current, high speed switching,

solenoid and relay drivers, regulators, audio amplifiers, automotive

environment.

FEATURES

* Low Gate Charge

* R

DS(on)

= 0.048

Ω

(TYP.)

* Avalanche Rugged Technology

* 100% Avalanche Tested

* Repetitive Avalanche at 100°C

* High Current Capability

* Operating Temperature: 150°C

* Application Oriented Characterization

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

25N06L-TA3-T

25N06G-TA3-T

25N06L-TN3-T

25N06G-TN3-T

25N06L-TN3-R

25N06G-TN3-R

Note: Pin Assignment: G: Gate, D: Drain, S: Source

Package

TO-220

TO-252

Pin Assignment

Packing

Tube

Tape Reel

www.unisonic.com.tw

1 of 6

QW-R502-450.b

25N06L-TN3-R Related Products

	25N06L-TN3-R	25N06G-TN3-R	25N06G-TN3-T	25N06L-TN3-T	25N06_11
Description	25A, 60V N-CHANNEL POWER MOSFET	25A, 60V N-CHANNEL POWER MOSFET	25A, 60V N-CHANNEL POWER MOSFET	25A, 60V N-CHANNEL POWER MOSFET	25A, 60V N-CHANNEL POWER MOSFET
Is it Rohs certified?	conform to	conform to	conform to	conform to	-
Maker	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	-
Parts packaging code	TO-252	TO-252	TO-252	TO-252	-
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	-
Contacts	4	4	4	4	-
Reach Compliance Code	compli	compli	compli	compli	-
ECCN code	EAR99	EAR99	EAR99	EAR99	-
Avalanche Energy Efficiency Rating (Eas)	100 mJ	100 mJ	100 mJ	100 mJ	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V	-
Maximum drain current (ID)	25 A	25 A	25 A	25 A	-
Maximum drain-source on-resistance	0.065 Ω	0.065 Ω	0.065 Ω	0.065 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	TO-252	TO-252	TO-252	TO-252	-
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	-
Number of components	1	1	1	1	-
Number of terminals	2	2	2	2	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
Maximum pulsed drain current (IDM)	100 A	100 A	100 A	100 A	-
surface mount	YES	YES	YES	YES	-
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	-
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-

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Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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