UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UT9435HZ
P-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UTC
UT9435HZ
is a P-channel enhancement power
MOSFET. It has low gate charge, fast switching speed and perfect
R
DS(ON)
.
This device is generally applied in power management
applications.
Power MOSFET
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UT9435HZL-S08-R
UT9435HZG-S08-R
SOP-8
UT9435HZL-S08-T
UT9435HZG-S08-T
SOP-8
Note: Pin Assignment: G: Gate
D: Drain
S: Source
UT3435HZL-S08-R
(1) Packing Type
(2) Package Type
(3) Lead Free
(1) R: Tape Reel, T: Tube
(2) S08: SOP-8
(3) G: Halogen Free, L: Lead Free
1
S
S
Pin Assignment
2 3 4 5 6 7
S S G D D D
S S G D D D
8
D
D
Packing
Tape Reel
Tube
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Copyright © 2012 Unisonic Technologies Co., Ltd
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QW-R502-740.a
UT9435HZ
PIN CONFIGURATION
Preliminary
Power MOSFET
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UT9435HZ
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DSS
-30
V
Gate to Source Voltage
V
GSS
±20
V
Continuous Drain Current (Note 3)
I
D
±5.3
A
Pulsed Drain Current (Note 1, 2)
I
DM
±20
A
Power Dissipation
P
D
2.5
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
RATINGS
50
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note 2)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=-250µA
V
DS
=-30V,V
GS
=0V
V
DS
=0V ,V
GS
=±20V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V,I
D
=-5.3A
V
GS
=-4.5V, I
D
=-4.2A
V
DS
=-5V, V
GS
=-10V
MIN
-30
-1
±5
-1
44
74
-20
1040
420
150
22.5
2
6
19
9
74
36
-0.84
29
-3
50
90
TYP
MAX UNIT
V
µA
µA
V
mΩ
mΩ
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
On State Drain Current
I
D(ON)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=-15V,V
GS
=0V,
Output Capacitance
C
OSS
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
Q
G
V
DS
=-15V,V
GS
=-10V,
Gate-Source Charge
Q
GS
I
D
=-4.6A
Gate-Drain Charge
Q
GD
Turn-ON Delay Time (Note 2)
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=-15V, I
D
=-1A,
V
GEN
=-10V, R
G
=6Ω,
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2)
V
SD
V
GS
=0V, I
S
=-5.3A
Notes: 1. Pulse width limited by T
J(MAX)
.
2. Pulse width
≤300μs,
duty cycle
≤2%.
3. Surface Mounted on 1in
2
copper pad of FR4 board
26
13
105
50
-1.3
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-740.a
UT9435HZ
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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