MMDT2907A_R1_00001 datasheet, PDF

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MMDT2907A_R1_00001: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMDT2907A_R1_00001 Overview

Small Signal Bipolar Transistor

MMDT2907A_R1_00001 Parametric

Parameter Name	Attribute value
Maker	PANJIT
package instruction	,
Reach Compliance Code	compliant

MMDT2907A_R1_00001 Preview

MMDT2907A

DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE

FEATURES

• PNP epitaxial silicon, planar design

• Collector-emitter voltage V

= -60V

• Collector current I

= -600mA

•

0.054(1.35)

0.045(1.15)

0.087(2.20)

0.074(1.90)

0.010(0.25)

60 Volts

POWER

150 mW

MECHANICAL DATA

• Case: SOT-363

• Terminals : Solderable per MIL-STD-750,Method 2026

• Apporx. Weight: 0.0002 ounce, 0.006 gram

• Device Marking : M7A

0.030(0.75)

0.021(0.55)

0.056(1.40)

0.047(1.20)

0.010(0.25)

0.003(0.08)

0.004(0.10)

0.000(0.00)

0.012(0.30)

0.005(0.15)

Fig.53

ABSOLUTE MAXIMUM RATINGS

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Symbol

CEO

CBO

EBO

Value

-60

-5.0

-600

Units

THERMAL CHATACTERISTICS

Parameter

Max Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient

Storage Temperature

Junction Temperaure

Symbol

TOT

θJA

STG

Value

150

830

-55 to +150

Units

C/W

Note 1 : Transistor mouted on FR-5 board 1.0 x 0.75 x 0.062 in.

May 12.2010-REV.00

PAGE . 1

MMDT2907A

ELECTRICAL CHARACTERISTICS

Parameter

Collector-Emitter Breakdown Voltage

=25

C, unless otherwise noted)

Symbol

(BR)

CEO

(BR)

CBO

(BR)

EBO

CEX

Test Condition

=-10mA,I

=-10μA,I

=-30V,V

=-0.5V

=-30V,V

=-0.5V

=-50V,I

Min.

-60

Typ.

Max.

Units

Collector-Base Breakdown Voltage

-60

Emitter-Base Breakdown Voltage

-5.0

Base Cutoff Current

-50

Collector Cutoff Current

CBO

-10

μA

=-50V,I

=125

100

-10

300

-0.4

-1.6

-1.3

-2.6

8.0

DC Current Gain

=-0.1mA,V

=-10V

=-1.0mA,V

=-10V

=-10mA,V

=-10V

=-150mA,V

=-10V

=-500mA,V

=-10V

=-150mA,I

=-15mA

=-500mA,I

=-50mA

=-150mA,I

=-15mA

=-500mA,I

=-50mA

=-10V,I

=0,f=1MHz

=-2V,I

=0,f=1MHz

=-50mA,V

=-20V,

f=100MHz

=-30V,V

=-0.5V,

=-150mA,I

=-15mA

=-30V,V

=-0.5V,

=-150mA,I

=-15mA

=-30V,V

=-0.5V,

=-150mA,I

=-15mA

=-6V,I

=-150mA,

=-15mA

=-6V,I

=-150mA,

=-15mA

=-6V,I

=-150mA,

=-15mA

Collector-Emitter Saturation Voltage

CE(SAT)

BE(SAT)

CBO

EBO

off

Base-Emitter Saturation Voltage

Collector-Base Capacitance

Emitter-Base Capacitance

Current Gain-Bandwidth Product

200

MHz

Turn-On Time

Delay Time

Rise Time

Turn-Off Time

100

Storage Time

Fall Time

May 12.2010-REV.00

PAGE . 2

MMDT2907A

, NORMALIZED CURRENT GAIN

3.0

2.0

VCE=-1.0V

VCE=-10V

=125 C

1.0

0.7

0.5

0.3

0.2

-0.1

-55 C

-0.2 -0.3

-0.5 -0.7 -1.0

-2.0 -3.0

-5.0 -7.0 -10

-20

-30

-50 -70 -100

-200 -300 -500

, COLLECTOR CURRENT (mA)

Fig.1-DC Cuttent Gain

-1.0

, COLLECTOR-EMITTER

VOLTAGE (VOLTS)

-0.8

=-1.0mA

-10mA

-100mA

-500mA

-0.6

-0.4

-0.2

-0.005 -0.01

-0.02 -0.03

-0.05

-0.07 -0.1

-0.2 -0.3

-0.5 -0.7 -1.0

-2.0 -3.0

-5.0 -7.0 -10

-20 -30

-50

, BASE CURRENT (mA)

Fig.2-Collector Saturation Region

300

200

100

7.0

5.0

500

300

=-30V

=10

=25 C

t, TIME (ns)

200

100

7.0

5.0

-5.0 -7.0 -10

=-30V

=10

B1=

=25

t, TIME (ns)

-1/8t

td@V

BE(OFF)

=0V

-20 -30

-50 -70 -100

2.0V

-200 -300 -500

3.0

-5.0 -7.0 -10

-20 -30

-50 -70 -100

-200-300 -500

, COLLECTOR CURRENT

Fig.3-Turn-On Time

, COLLECTOR CURRENT (mA)

Fig.4-Turn-Off Time

May 12.2010-REV.00

PAGE . 3

MMDT2907A

f=1.0kHz

NF, NOISE FIGURE (dB)

8.0

=-1.0mA,R

=430

-500

A,R

=560

-50

A,R

=2.7k

-100

A,R

=1.6

NF, NOISE FIGURE (dB)

8.0

6.0

=-50

-100

-500

-1.0mA

4.0

=OPTIMUM SOURCE RESISTANCE

2.0

0.01 0.02

0.05 0.1

0.2

0.5

1.0

2.0

5.0

100

50 100

200

500 1.0k 2.0k

5.0k 10k

20k

50k

f, FREQUENCY (kHz)

Fig.5-Frequency Effects

, SURGE RESISTANCE (OHMS)

Fig.6-Source Resistance Effects

, CURR ENT-G AIN-B ANDW IDTH

PROD UCT (MHz)

400

300

200

C, CAPACI TANCE (pF)

7.0

5.0

100

-1.0 -2.0

=-20V

=25 C

3.0

2.0

-0.1

-0.2 -0.3 -0.5

-1.0

-2.0-3.0 -5.0

-10

-20 -30

-5.0

-10 -20

-50 -100 -200

-500 -1000

REVERSE VOLTAGE (VOLTS)

Fig.7-Capacitances

, COLLECTOR CURRENT (mA)

Fig.8-Current-Gain-Bandwidth Product

-1.0

=25

BE(sat)

=10

+0.5

QVC

for V

CE(sat)

COEFFIC IENT (mV/ C)

-0.8

V, VOLTAGE (VOLTS)

-0.6

BE(on)

=-10V

-0.5

-1.0

-1.5

-2.0

-2.5

-0.1 -0.2 -0.5 -1.0 -2.0

-0.4

-0.2

CE(sat)

@ I

=10

-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20

QVB

for V

-50 -100-200

-500

-5.0 -10 -20 -50 -100 -200 -500

, COLLECTOR CURRENT (mA)

Fig.9-On Voltage

, COLLECTOR CURRENT (mA)

Fig.10-Temperature Coefficients

May 12.2010-REV.00

PAGE . 4

MMDT2907A

MOUNTING PAD LAYOUT

0.018

(0.45)

0.026

(0.65)

0.026

(0.65)

ORDER INFORMATION

• Packing information

T/R - 10K per 13" plastic Reel

T/R - 3K per 7” plastic Reel

May 12.2010-REV.00

PAGE .

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