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UT4411-S08-T

Description
P-CHANNEL ENHANCEMENT MODE
CategoryDiscrete semiconductor    The transistor   
File Size262KB,6 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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UT4411-S08-T Overview

P-CHANNEL ENHANCEMENT MODE

UT4411-S08-T Parametric

Parameter NameAttribute value
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.032 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)40 A
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
UT4411
P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The
UT4411
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
= 32mΩ @V
GS
= 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
Drain
Lead-free:
UT4411L
Halogen-free : UT4411G
Gate
Source
ORDERING INFORMATION
Normal
UT4411-S08-R
UT4411-S08-T
Ordering Number
Lead Free Plating
UT4411L-S08-R
UT4411L-S08-T
Halogen Free
UT4411G-S08-R
UT4411G-S08-T
Package
SOP-8
SOP-8
Packing
Tape Reel
Tube
www.unisonic.com.tw
1 of 6
QW-R502-191.B
Copyright © 2008 Unisonic Technologies Co., Ltd

UT4411-S08-T Related Products

UT4411-S08-T UT4411 UT4411-S08-R UT4411G-S08-T UT4411L-S08-R UT4411L-S08-T
Description P-CHANNEL ENHANCEMENT MODE P-CHANNEL ENHANCEMENT MODE P-CHANNEL ENHANCEMENT MODE P-CHANNEL ENHANCEMENT MODE P-CHANNEL ENHANCEMENT MODE P-CHANNEL ENHANCEMENT MODE
Parts packaging code SOT - SOT SOT SOT SOT
package instruction SMALL OUTLINE, R-PDSO-G8 - SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Contacts 8 - 8 8 8 8
Reach Compliance Code compli - compli compli compli compli
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V - 30 V 30 V 30 V 30 V
Maximum drain current (ID) 8 A - 8 A 8 A 8 A 8 A
Maximum drain-source on-resistance 0.032 Ω - 0.032 Ω 0.032 Ω 0.032 Ω 0.032 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8 - R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
Number of components 1 - 1 1 1 1
Number of terminals 8 - 8 8 8 8
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type P-CHANNEL - P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) 40 A - 40 A 40 A 40 A 40 A
surface mount YES - YES YES YES YES
Terminal form GULL WING - GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL - DUAL DUAL DUAL DUAL
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON SILICON
Maker - - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
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