UNISONIC TECHNOLOGIES CO., LTD
UT4411
P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The
UT4411
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
= 32mΩ @V
GS
= 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
Drain
Lead-free:
UT4411L
Halogen-free : UT4411G
Gate
Source
ORDERING INFORMATION
Normal
UT4411-S08-R
UT4411-S08-T
Ordering Number
Lead Free Plating
UT4411L-S08-R
UT4411L-S08-T
Halogen Free
UT4411G-S08-R
UT4411G-S08-T
Package
SOP-8
SOP-8
Packing
Tape Reel
Tube
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QW-R502-191.B
Copyright © 2008 Unisonic Technologies Co., Ltd
UT4411
PIN CONFIGURATION
Power MOSFET
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UT4411
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25℃, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
-30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
I
D
-8
A
Pulsed Drain Current
I
DM
-40
A
Power Dissipation
P
D
3
W
℃
Junction Temperature
T
J
+150
℃
Strong Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
SYMBOL
θ
JA
MIN
TYP
54
MAX
75
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
TEST CONDITIONS
V
GS
=0 V, I
D
=-250 µA
V
DS
=-24 V, V
GS
=0 V
V
DS
=0 V, V
GS
= ±20 V
V
DS
=V
GS
, I
D
=-250 µA
V
DS
=-5V, V
GS
=-10 V
V
GS
=-10 V, I
D
=-8 A
V
GS
=-4.5 V, I
D
=-5 A
MIN
-30
-1
±100
-1.2
-40
-2
24.5
41
920
190
122
18.4
2.7
4.9
7.1
3.4
18.9
8.4
-0.76
21.5
12.5
-2.4
32
55
1120
pF
TYP
MAX UNIT
V
µA
nA
V
A
mΩ
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=-15V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=-15V, V
GS
=-10V,
Gate Source Charge
Q
GS
I
D
=-8A
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
GS
=-10V,V
DS
=-15V,
R
L
=1.8Ω, R
GEN
=3Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
V
SD
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
I
S
Body Diode Reverse Recovery Time
t
RR
I
F
=-8A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge
Q
RR
I
F
=-8 A, dI/dt=100A/μs
Notes: 1. Pulse width limited by T
J(MAX)
2. Pulse width
≤300us,
duty cycle
≤0.5%
max.
3. Surface mounted on 1 in
2
copper pad of FR4 board, t≤10s.
23
nC
ns
-1
-4.2
27
V
A
ns
nC
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UT4411
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current,-I
D
(A)
60
Drain to Source On-Resistance,
R
DS(ON)
(mΩ)
55
50
45
40
35
30
25
20
15
10
0
On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=-4.5V
Drain Current,-I
D
(A)
1.60
On-Resistance vs. Junction Temperature
I
D
=-7.5A
V
GS
=-10V
Normalized On-Resistance
1.40
1.20
V
GS
=-4.5V
V
GS
=-10V
1.00
0.80
5
10
15
20
Drain Current,-I
D
(A)
25
0
25
75 100 125 150
50
Junction Temperature (℃)
175
80
Drain to Source On-Resistance,
R
DS(ON)
(mΩ)
70
On-Resistance vs. Gate-Source Voltage
I
D
=-7.5A
Reverse Drain Current,-I
S
(A)
1.0E+01
1.0E+00
Body-Diode Characteristics
60
50
40
30
20
10
0
3
4
5
6
8
9
7
Gate to Source Voltage,-V
GS
(V)
10
25℃
125℃
125℃
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.0
25℃
1.0
0.4
0.6
0.2
0.8
Body Diode Forward Voltage,-V
SD
(V)
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UT4411
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Gate to Source Voltage,-V
GS
(V)
Capacitance (pF)
100.0
Maximum Forward Biased Safe Operating
Area (Note E)
40
Single Pulse Power Rating Junction-
to-Ambient (Note E)
T
J(Max)
=150℃
T
A
=25℃
R
DS(ON)
Limited
10.0
10ms
0.1s
1s
10s
100μs
1ms
10μs
30
20
1.0
T
J(Max)
=150℃
T
A
=25℃
10
DC
0
0.001 0.01
0.1
1
10
100
1000
0.1
0.1
1
10
100
Drain to Source Voltage,-V
DS
(V)
Pulse Width (s)
Normalized Transient Thermal
Resistance,Z
θ
JA
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