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UT3N06G-TN3-T

Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size156KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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UT3N06G-TN3-T Overview

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

UT3N06G-TN3-T Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codecompli
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance0.09 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment1.13 W
Maximum power dissipation(Abs)1.13 W
Maximum pulsed drain current (IDM)10 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

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