UT3N06L-AE3-R datasheet, PDF - EEWORLD Datasheet

UT3N06L-AE3-R: DescriptionN-CHANNEL ENHANCEMENT MODE POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size156KB，3 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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UT3N06L-AE3-R Overview

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	0.35 W
Maximum power dissipation(Abs)	0.35 W
Maximum pulsed drain current (IDM)	12 A
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	UT3N06L-AE3-R	UT3N06G-TN3-T	UT3N06L-TN3-T	UT3N06_11	UT3N06
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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