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UT2301L-AE3-R

Description
2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size177KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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UT2301L-AE3-R Overview

2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

UT2301L-AE3-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)2.8 A
Maximum drain-source on-resistance0.13 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)10 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
UT2301
2.8A, 20V P-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
DESCRIPTION
The UTC
UT2301
is P-channel enhancement mode power
MOSFET, designed in serried ranks. With fast switching speed, low
on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Power MOSFET
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2301L-AE2-R
UT2301G-AE2-R
UT2301L-AE3-R
UT2301G-AE3-R
Package
SOT-23-3
SOT-23
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
MARKING
23A
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-118.G

UT2301L-AE3-R Related Products

UT2301L-AE3-R UT2301 UT2301L-AE2-R
Description 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Is it Rohs certified? conform to - conform to
Maker UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD
package instruction SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3
Contacts 3 - 3
Reach Compliance Code compli - compli
ECCN code EAR99 - EAR99
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V - 20 V
Maximum drain current (ID) 2.8 A - 2.8 A
Maximum drain-source on-resistance 0.13 Ω - 0.13 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G3 - R-PDSO-G3
Number of components 1 - 1
Number of terminals 3 - 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type P-CHANNEL - P-CHANNEL
Maximum pulsed drain current (IDM) 10 A - 10 A
surface mount YES - YES
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
Base Number Matches 1 - 1
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