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UT2301

Description
2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size177KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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UT2301 Overview

2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
UT2301
2.8A, 20V P-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
DESCRIPTION
The UTC
UT2301
is P-channel enhancement mode power
MOSFET, designed in serried ranks. With fast switching speed, low
on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Power MOSFET
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2301L-AE2-R
UT2301G-AE2-R
UT2301L-AE3-R
UT2301G-AE3-R
Package
SOT-23-3
SOT-23
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
MARKING
23A
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-118.G

UT2301 Related Products

UT2301 UT2301L-AE2-R UT2301L-AE3-R
Description 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Is it Rohs certified? - conform to conform to
Maker - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts - 3 3
Reach Compliance Code - compli compli
ECCN code - EAR99 EAR99
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 20 V 20 V
Maximum drain current (ID) - 2.8 A 2.8 A
Maximum drain-source on-resistance - 0.13 Ω 0.13 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - R-PDSO-G3 R-PDSO-G3
Number of components - 1 1
Number of terminals - 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) - 10 A 10 A
surface mount - YES YES
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
Base Number Matches - 1 1
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