GA20SICP12-263
Normally – OFF Silicon Carbide
Junction Transistor
V
DS
R
DS(ON)
I
D (@ 25°C)
I
D (@ 145°C)
h
FE (@ 25°C)
Package
•
RoHS Compliant
TAB
Drain
=
=
=
=
=
1200 V
50 mΩ
45 A
20 A
80
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
175 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Optional Gate Return Pin
Exceptional Safe Operating Area
Integrated SiC Schottky Rectifier
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of R
DS,ON
Suitable for Connecting an Anti-parallel Diode
Drain
(TAB)
Gate
(Pin 1)
67
45 S
3 SS
2
S
1
GRS
G
Gate Return
Source
(Pin 2)
(Pin 3, 4, 5, 6, 7)
7L D2PAK (TO-263-7L)
Please note: The Source and Gate Return pins
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Applications
•
•
•
•
•
•
•
•
are not exchangeable. Their exchange might
lead to malfunction.
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings .......................................................................................................... 1
Section II: Static Electrical Characteristics ................................................................................................... 2
Section III: Dynamic Electrical Characteristics ............................................................................................ 2
Section IV: Figures .......................................................................................................................................... 4
Section V: Driving the GA20SICP12-263 ....................................................................................................... 8
Section VI: Package Dimensions ................................................................................................................. 12
Section VII: SPICE Model Parameters ......................................................................................................... 13
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Continuous Gate Return Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
V
DS
I
D
I
D
I
G
I
GR
RBSOA
SCSOA
V
SG
V
SD
P
tot
T
stg
Conditions
V
GS
= 0 V
T
C
= 25°C
T
C
= 145°C
T
VJ
= 175
o
C,
Clamped Inductive Load
T
VJ
= 175
o
C, I
G
= 1 A, V
DS
= 800 V,
Non Repetitive
Value
1200
45
20
1.3
1.3
I
D,max
= 20
@ V
DS
≤ V
DSmax
>20
30
25
282 / 56
-55 to 175
Unit
V
A
A
A
A
A
µs
V
V
W
°C
Notes
Fig. 17
Fig. 17
Fig. 19
T
C
= 25 °C / 145 °C, t
p
> 100 ms
Fig. 16
Nov 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
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GA20SICP12-263
Parameter
Symbol
Conditions
Value
Unit
Notes
Free-Wheeling SiC Diode
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current,
Half Sine Wave
Non-repetitive peak forward current
I t value
2
V
RRM
I
F
I
F(RMS)
I
FSM
I
F,max
∫i
dt
2
T
C
≤
110 °C
T
C
≤ 110
°C
T
C
= 25 °C, t
P
= 10 ms
T
C
= 150 °C, t
P
= 10 ms
T
C
= 25 °C, t
P
= 10 µs
T
C
= 25 °C, t
P
= 10 ms
T
C
= 115 °C, t
P
= 10 ms
1200
20
32
65
55
280
21
15
0.53
0.8
V
A
A
A
A
As
2
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - case
R
thJC
R
thJC
SiC Junction Transistor
SiC Diode
°C/W
°C/W
Fig. 20
Fig. 21
Section II: Static Electrical Characteristics
Parameter
Symbol
Conditions
Min.
Value
Typical
Max.
Unit
Notes
A:
On State
Drain – Source On Resistance
Gate – Source Saturation Voltage
DC Current Gain
FWD forward voltage
R
DS(ON)
V
GS,SAT
h
FE
V
F
I
D
= 20 A, T
j
= 25 °C
I
D
= 20 A, T
j
= 150 °C
I
D
= 20 A, T
j
= 175 °C
I
D
= 20 A, I
D
/I
G
= 40, T
j
= 25 °C
I
D
= 20 A, I
D
/I
G
= 30, T
j
= 175 °C
V
DS
= 8 V, I
D
= 20 A, T
j
= 25 °C
V
DS
= 8 V, I
D
= 20 A, T
j
= 125 °C
V
DS
= 8 V, I
D
= 20 A, T
j
= 175 °C
I
F
= 20 A, T
j
= 25 °C
I
F
= 20 A, T
j
= 175 °C
50
83
95
3.44
3.24
80
51
45
2.2
4.4
mΩ
V
–
V
Fig. 4
Fig. 7
B: Off State
Drain Leakage Current
Gate Leakage Current
I
DSS
I
SG
V
DS
= 1200 V, V
GS
= 0 V, T
j
= 25 °C
V
DS
= 1200 V, V
GS
= 0 V, T
j
= 150 °C
V
DS
= 1200 V, V
GS
= 0 V, T
j
= 175 °C
V
SG
= 20 V, T
j
= 25 °C
10
20
40
20
μA
nA
Fig. 8
Section III: Dynamic Electrical Characteristics
Parameter
Symbol
Conditions
Value
Typical
Unit
Notes
Min.
Max.
A: Capacitance and Gate Charge
Input Capacitance
Reverse Transfer/Output Capacitance
Total Output Capacitance Charge
Output Capacitance Stored Energy
Effective Output Capacitance,
time related
Effective Output Capacitance,
energy related
Gate-Source Charge
Gate-Drain Charge
Gate Charge - Total
C
iss
C
rss
/C
oss
Qoss
E
OSS
C
oss,tr
C
oss,er
Q
GS
Q
GD
Q
G
V
GS
= 0 V, V
DS
= 800 V,
f
= 1 MHz
V
DS
= 1 V, f = 1 MHz
V
DS
= 400 V, f = 1 MHz
V
DS
= 800 V, f = 1 MHz
V
DS
= 400 V
V
DS
= 800 V
V
GS
= 0 V, V
DS
= 800 V,
f
= 1 MHz
I
D
= constant, V
GS
= 0 V, V
DS
= 0…800 V
V
GS
= 0 V, V
DS
= 0…800 V
V
GS
= -5…3 V
V
GS
= 0 V, V
DS
= 0…800 V
2870
1260
115
85
85
125
35
155
110
25
80
105
pF
pF
nC
µJ
pF
pF
nC
nC
nC
Fig. 9
Fig. 9
Fig. 10
Nov 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
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GA20SICP12-263
Parameter
Symbol
Conditions
Min.
Value
Typical
Max.
Unit
Notes
B: Switching
1
Internal Gate Resistance – ON
Turn On Delay Time
Fall Time, V
DS
Turn Off Delay Time
Rise Time, V
DS
Turn On Delay Time
Fall Time, V
DS
Turn Off Delay Time
Rise Time, V
DS
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
1
R
G(INT-ON)
t
d(on)
t
f
t
d(off)
t
r
t
d(on)
t
f
t
d(off)
t
r
E
on
E
off
E
tot
E
on
E
off
E
tot
V
GS
> 2.5 V, V
DS
= 0 V, T
j
= 175 ºC
T
j
= 25 ºC, V
DS
= 800 V,
I
D
= 20 A, Resistive Load
Refer to Section V for additional
driving information.
T
j
= 175 ºC, V
DS
= 800 V,
I
D
= 20 A, Resistive Load
T
j
= 25 ºC, V
DS
= 800 V,
I
D
= 20 A, Inductive Load
Refer to Section V.
T
j
= 175 ºC, V
DS
= 800 V,
I
D
= 20 A, Inductive Load
0.13
12
14
24
12
15
13
30
10
320
40
360
300
30
330
Ω
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
Fig. 11, 13
Fig. 12, 14
Fig. 11
Fig. 12
Fig. 11, 13
Fig. 12, 14
Fig. 11
Fig. 12
– All times are relative to the Drain-Source Voltage V
DS
Nov 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
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GA20SICP12-263
Section IV: Figures
A: Static Characteristics
Figure 1: Typical Output Characteristics at 25 °C
Figure 2: Typical Output Characteristics at 150 °C
Figure 3: Typical Output Characteristics at 175 °C
Figure 4: DC Current Gain vs. Drain Current
Figure 5: On-Resistance vs. Gate Current
Figure 6: On-Resistance vs. Temperature
Nov 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
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GA20SICP12-263
Figure 7: Typical Gate
–
Source Saturation Voltage
Figure 8: Typical Blocking Characteristics
B: Dynamic Characteristics
Figure 9: Input, Output, and Reverse Transfer Capacitance
Figure 10: Energy Stored in Output Capacitance
Figure 11: Typical Switching Times and Turn On Energy
Losses vs. Temperature
Figure 12: Typical Switching Times and Turn Off Energy
Losses vs. Temperature
Nov 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
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