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TMF120HD

Description
Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, HERMETIC SEALED, TO-99, 8 PIN
CategoryDiscrete semiconductor    The transistor   
File Size112KB,2 Pages
ManufacturerUniversal Semiconductor Inc
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TMF120HD Overview

Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, HERMETIC SEALED, TO-99, 8 PIN

TMF120HD Parametric

Parameter NameAttribute value
MakerUniversal Semiconductor Inc
Parts packaging codeTO-99
package instructionCYLINDRICAL, O-MBCY-W8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)0.05 A
Maximum drain current (ID)0.05 A
Maximum drain-source on-resistance100 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.7 pF
JEDEC-95 codeTO-99
JESD-30 codeO-MBCY-W8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature125 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON

TMF120HD Related Products

TMF120HD TMF122HD TMF123HD/R TMF122HD/R TMF121HD TMF121HD/R TMF121CHP TMF120HD/R
Description Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, HERMETIC SEALED, TO-99, 8 PIN Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, HERMETIC SEALED, TO-99, 8 PIN Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, TO-99, 8 PIN Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, TO-99, 8 PIN Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, HERMETIC SEALED, TO-99, 8 PIN Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, TO-99, 8 PIN Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, TO-99, 8 PIN
package instruction CYLINDRICAL, O-MBCY-W8 CYLINDRICAL, O-MBCY-W8 CYLINDRICAL, O-MBCY-W8 CYLINDRICAL, O-MBCY-W8 CYLINDRICAL, O-MBCY-W8 CYLINDRICAL, O-MBCY-W8 UNCASED CHIP, R-XUUC-N6 CYLINDRICAL, O-MBCY-W8
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V
Maximum drain current (Abs) (ID) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
Maximum drain current (ID) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
Maximum drain-source on-resistance 100 Ω 100 Ω 100 Ω 100 Ω 100 Ω 100 Ω 100 Ω 100 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.7 pF 0.7 pF 0.7 pF 0.7 pF 0.7 pF 0.7 pF 0.7 pF 0.7 pF
JESD-30 code O-MBCY-W8 O-MBCY-W8 O-MBCY-W8 O-MBCY-W8 O-MBCY-W8 O-MBCY-W8 R-XUUC-N6 O-MBCY-W8
Number of components 2 2 2 2 2 2 2 2
Number of terminals 8 8 8 8 8 8 6 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Package body material METAL METAL METAL METAL METAL METAL UNSPECIFIED METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND RECTANGULAR ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL UNCASED CHIP CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO YES NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE NO LEAD WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM UPPER BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maker Universal Semiconductor Inc - Universal Semiconductor Inc Universal Semiconductor Inc Universal Semiconductor Inc Universal Semiconductor Inc Universal Semiconductor Inc Universal Semiconductor Inc
Parts packaging code TO-99 TO-99 TO-99 TO-99 TO-99 TO-99 - TO-99
Contacts 8 8 8 8 8 8 - 8
JEDEC-95 code TO-99 TO-99 TO-99 TO-99 TO-99 TO-99 - TO-99
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