TMF122HD datasheet, PDF - EEWORLD Datasheet

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TMF122HD: DescriptionSmall Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, HERMETIC SEALED, TO-99, 8 PIN; CategoryDiscrete semiconductor The transistor; File Size112KB，2 Pages; ManufacturerUniversal Semiconductor Inc

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TMF122HD Overview

Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, HERMETIC SEALED, TO-99, 8 PIN

TMF122HD Parametric

Parameter Name	Attribute value
Parts packaging code	TO-99
package instruction	CYLINDRICAL, O-MBCY-W8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage	25 V
Maximum drain current (Abs) (ID)	0.05 A
Maximum drain current (ID)	0.05 A
Maximum drain-source on-resistance	100 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.7 pF
JEDEC-95 code	TO-99
JESD-30 code	O-MBCY-W8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	125 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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	TMF122HD	TMF123HD/R	TMF122HD/R	TMF121HD	TMF121HD/R	TMF121CHP	TMF120HD	TMF120HD/R
Description	Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, HERMETIC SEALED, TO-99, 8 PIN	Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, TO-99, 8 PIN	Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, TO-99, 8 PIN	Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, HERMETIC SEALED, TO-99, 8 PIN	Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, TO-99, 8 PIN	Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, HERMETIC SEALED, TO-99, 8 PIN	Small Signal Field-Effect Transistor, 0.05A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99, TO-99, 8 PIN
package instruction	CYLINDRICAL, O-MBCY-W8	CYLINDRICAL, O-MBCY-W8	CYLINDRICAL, O-MBCY-W8	CYLINDRICAL, O-MBCY-W8	CYLINDRICAL, O-MBCY-W8	UNCASED CHIP, R-XUUC-N6	CYLINDRICAL, O-MBCY-W8	CYLINDRICAL, O-MBCY-W8
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage	25 V	25 V	25 V	25 V	25 V	25 V	25 V	25 V
Maximum drain current (Abs) (ID)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
Maximum drain current (ID)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
Maximum drain-source on-resistance	100 Ω	100 Ω	100 Ω	100 Ω	100 Ω	100 Ω	100 Ω	100 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.7 pF	0.7 pF	0.7 pF	0.7 pF	0.7 pF	0.7 pF	0.7 pF	0.7 pF
JESD-30 code	O-MBCY-W8	O-MBCY-W8	O-MBCY-W8	O-MBCY-W8	O-MBCY-W8	R-XUUC-N6	O-MBCY-W8	O-MBCY-W8
Number of components	2	2	2	2	2	2	2	2
Number of terminals	8	8	8	8	8	6	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Package body material	METAL	METAL	METAL	METAL	METAL	UNSPECIFIED	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	RECTANGULAR	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	UNCASED CHIP	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	YES	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	NO LEAD	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	UPPER	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Parts packaging code	TO-99	TO-99	TO-99	TO-99	TO-99	-	TO-99	TO-99
Contacts	8	8	8	8	8	-	8	8
JEDEC-95 code	TO-99	TO-99	TO-99	TO-99	TO-99	-	TO-99	TO-99
Maker	-	Universal Semiconductor Inc	Universal Semiconductor Inc	Universal Semiconductor Inc	Universal Semiconductor Inc	Universal Semiconductor Inc	Universal Semiconductor Inc	Universal Semiconductor Inc

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