TN0106N3-GP013 datasheet, PDF - EEWORLD Datasheet

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TN0106N3-GP013: Description350mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92; CategoryDiscrete semiconductor The transistor; File Size602KB，5 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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TN0106N3-GP013 Overview

350mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

TN0106N3-GP013 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microchip
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.35 A
Maximum drain-source on-resistance	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	8 pF
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

TN0106N3-GP013 Related Products

	TN0106N3-GP013	TN0106N3-GP003	TN0106N3-GP005	TN0106N3-GP014
Description	350mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	SMALL SIGNAL, FET	SMALL SIGNAL, FET	SMALL SIGNAL, FET
Maker	Microchip	Microchip	Microchip	Microchip
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	ROHS COMPLIANT PACKAGE-3	ROHS COMPLIANT PACKAGE-3
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V
Maximum drain current (ID)	0.35 A	0.35 A	0.35 A	0.35 A
Maximum drain-source on-resistance	3 Ω	3 Ω	3 Ω	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	8 pF	8 pF	8 pF	8 pF
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	conform to	conform to	conform to	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-

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