K7N803645M-QC10 datasheet, PDF

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K7N803645M-QC10: DescriptionZBT SRAM, 256KX36, 5ns, CMOS, PQFP100; Categorystorage storage; File Size398KB，18 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K7N803645M-QC10 Overview

ZBT SRAM, 256KX36, 5ns, CMOS, PQFP100

K7N803645M-QC10 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	QFP, QFP100,.63X.87
Reach Compliance Code	unknown
Maximum access time	5 ns
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
memory density	9437184 bit
Memory IC Type	ZBT SRAM
memory width	36
Humidity sensitivity level	3
Number of terminals	100
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QFP
Encapsulate equivalent code	QFP100,.63X.87
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	2.5 V
Certification status	Not Qualified
Maximum standby current	0.02 A
Minimum standby current	2.38 V
Maximum slew rate	0.25 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	40

K7N803645M-QC10 Related Products

	K7N803645M-QC10	K7N801845M-QC13	K7N801845M-QC15	K7N801845M-QC10	K7N801845M-QC16	K7N803645M-QC15	K7N803645M-QC13	K7N803645M-QC16
Description	ZBT SRAM, 256KX36, 5ns, CMOS, PQFP100	ZBT SRAM, 512KX18, 4.2ns, CMOS, PQFP100	ZBT SRAM, 512KX18, 3.8ns, CMOS, PQFP100	ZBT SRAM, 512KX18, 5ns, CMOS, PQFP100	ZBT SRAM, 512KX18, 3.5ns, CMOS, PQFP100	ZBT SRAM, 256KX36, 3.8ns, CMOS, PQFP100	ZBT SRAM, 256KX36, 4.2ns, CMOS, PQFP100	ZBT SRAM, 256KX36, 3.5ns, CMOS, PQFP100
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	5 ns	4.2 ns	3.8 ns	5 ns	3.5 ns	3.8 ns	4.2 ns	3.5 ns
Maximum clock frequency (fCLK)	100 MHz	133 MHz	149 MHz	100 MHz	166 MHz	149 MHz	133 MHz	166 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0
memory density	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit
Memory IC Type	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
memory width	36	18	18	18	18	36	36	36
Humidity sensitivity level	3	3	3	3	3	3	3	3
Number of terminals	100	100	100	100	100	100	100	100
word count	262144 words	524288 words	524288 words	524288 words	524288 words	262144 words	262144 words	262144 words
character code	256000	512000	512000	512000	512000	256000	256000	256000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	256KX36	512KX18	512KX18	512KX18	512KX18	256KX36	256KX36	256KX36
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
Encapsulate equivalent code	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260
power supply	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A
Minimum standby current	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V
Maximum slew rate	0.25 mA	0.3 mA	0.32 mA	0.25 mA	0.35 mA	0.32 mA	0.3 mA	0.35 mA
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	40	40	40	40	40	40	40	40

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