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K7N801845M-QC13

Description
ZBT SRAM, 512KX18, 4.2ns, CMOS, PQFP100
Categorystorage    storage   
File Size398KB,18 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K7N801845M-QC13 Overview

ZBT SRAM, 512KX18, 4.2ns, CMOS, PQFP100

K7N801845M-QC13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionQFP, QFP100,.63X.87
Reach Compliance Codeunknown
Maximum access time4.2 ns
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee0
memory density9437184 bit
Memory IC TypeZBT SRAM
memory width18
Humidity sensitivity level3
Number of terminals100
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5 V
Certification statusNot Qualified
Maximum standby current0.02 A
Minimum standby current2.38 V
Maximum slew rate0.3 mA
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.635 mm
Terminal locationQUAD
Maximum time at peak reflow temperature40
Base Number Matches1

K7N801845M-QC13 Related Products

K7N801845M-QC13 K7N801845M-QC15 K7N801845M-QC10 K7N801845M-QC16 K7N803645M-QC15 K7N803645M-QC13 K7N803645M-QC10 K7N803645M-QC16
Description ZBT SRAM, 512KX18, 4.2ns, CMOS, PQFP100 ZBT SRAM, 512KX18, 3.8ns, CMOS, PQFP100 ZBT SRAM, 512KX18, 5ns, CMOS, PQFP100 ZBT SRAM, 512KX18, 3.5ns, CMOS, PQFP100 ZBT SRAM, 256KX36, 3.8ns, CMOS, PQFP100 ZBT SRAM, 256KX36, 4.2ns, CMOS, PQFP100 ZBT SRAM, 256KX36, 5ns, CMOS, PQFP100 ZBT SRAM, 256KX36, 3.5ns, CMOS, PQFP100
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
package instruction QFP, QFP100,.63X.87 QFP, QFP100,.63X.87 QFP, QFP100,.63X.87 QFP, QFP100,.63X.87 QFP, QFP100,.63X.87 QFP, QFP100,.63X.87 QFP, QFP100,.63X.87 QFP, QFP100,.63X.87
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
Maximum access time 4.2 ns 3.8 ns 5 ns 3.5 ns 3.8 ns 4.2 ns 5 ns 3.5 ns
Maximum clock frequency (fCLK) 133 MHz 149 MHz 100 MHz 166 MHz 149 MHz 133 MHz 100 MHz 166 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
memory density 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit
Memory IC Type ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
memory width 18 18 18 18 36 36 36 36
Humidity sensitivity level 3 3 3 3 3 3 3 3
Number of terminals 100 100 100 100 100 100 100 100
word count 524288 words 524288 words 524288 words 524288 words 262144 words 262144 words 262144 words 262144 words
character code 512000 512000 512000 512000 256000 256000 256000 256000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 512KX18 512KX18 512KX18 512KX18 256KX36 256KX36 256KX36 256KX36
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code QFP QFP QFP QFP QFP QFP QFP QFP
Encapsulate equivalent code QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260 260
power supply 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.02 A 0.02 A 0.02 A 0.02 A 0.02 A 0.02 A 0.02 A 0.02 A
Minimum standby current 2.38 V 2.38 V 2.38 V 2.38 V 2.38 V 2.38 V 2.38 V 2.38 V
Maximum slew rate 0.3 mA 0.32 mA 0.25 mA 0.35 mA 0.32 mA 0.3 mA 0.25 mA 0.35 mA
Nominal supply voltage (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm
Terminal location QUAD QUAD QUAD QUAD QUAD QUAD QUAD QUAD
Maximum time at peak reflow temperature 40 40 40 40 40 40 40 40

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