ZBT SRAM, 2MX36, 3.5ns, CMOS, PQFP100,
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | SAMSUNG |
| Reach Compliance Code | unknown |
| Maximum access time | 3.5 ns |
| Maximum clock frequency (fCLK) | 166 MHz |
| I/O type | COMMON |
| JESD-30 code | R-PQFP-G100 |
| JESD-609 code | e6 |
| memory density | 75497472 bit |
| Memory IC Type | ZBT SRAM |
| memory width | 36 |
| Humidity sensitivity level | 3 |
| Number of terminals | 100 |
| word count | 2097152 words |
| character code | 2000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 2MX36 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | QFP |
| Encapsulate equivalent code | QFP100,.63X.87 |
| Package shape | RECTANGULAR |
| Package form | FLATPACK |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 260 |
| power supply | 2.5 V |
| Certification status | Not Qualified |
| Minimum standby current | 2.38 V |
| Nominal supply voltage (Vsup) | 2.5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Bismuth (Sn97Bi3) |
| Terminal form | GULL WING |
| Terminal pitch | 0.635 mm |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | 40 |
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