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Datasheet> All Categories > Discrete semiconductor> 2N5087
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2N5087

Description
PNP transistor
CategoryDiscrete semiconductor   
File Size113KB，1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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2N5087 Overview

PNP transistor

Features

Product Name: PNP Transistor


Product model: 2N5087



Product parameters:


Pcm (maximum power dissipation): 625mW


Ic (collector current): 50mA


BVcbo (Collector-Base Breakdown Voltage): 50V


BVceo (Collector-Emitter Breakdown Voltage): 50V


BVebo (emitter-base breakdown voltage): 3V


hFE (current gain): Min: 250, Max: 800


VCE (sat) saturation voltage drop: 0.3V


fT (transition frequency): 40MHz



Package: TO-92

2N5087 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2N5087
TRANSISTOR (PNP)
1. EMITTER
FEATURES
General Purpose Amplifier Transistor
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-50
-50
-3
-50
625
200
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)*
h
FE(2)*
h
FE(3)*
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
V
CE(sat)
V
BE
f
T
*
*
Test
conditions
Min
-50
-50
-3
Typ
Max
Unit
V
V
V
I
C
=-0.1mA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-0.01mA,I
C
=0
V
CB
=-35V,I
E
=0
V
EB
=-3V,I
C
=0
V
CE
=-5V, I
C
=-0.1mA
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
I
C
=-10mA,I
B
=-1mA
V
CE
=-5V, I
C
=-10mA
V
CB
=-5V,I
E
=0, f=1MHz
V
CE
=-5V,I
C
=-0.5mA, f=100MHz
-50
-50
250
250
250
-0.3
-0.85
4
40
800
nA
nA
V
V
pF
MHz
C
ob
*Pulse test: pulse width
≤380μs,
duty cycle≤ 2.0%.
A,Dec,2010

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