Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Motorola ( NXP ) |
Reach Compliance Code | unknown |
Shell connection | ISOLATED |
Nominal circuit commutation break time | 15 µs |
Configuration | SINGLE |
Maximum DC gate trigger current | 40 mA |
Maximum DC gate trigger voltage | 1.5 V |
Maximum holding current | 40 mA |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e0 |
Maximum leakage current | 2 mA |
On-state non-repetitive peak current | 300 A |
Number of components | 1 |
Number of terminals | 3 |
Maximum on-state current | 25000 A |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -40 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum rms on-state current | 25 A |
Maximum repetitive peak off-state leakage current | 10 µA |
Off-state repetitive peak voltage | 400 V |
Repeated peak reverse voltage | 400 V |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Trigger device type | SCR |
MCR225-6FP | MCR225-10FP | MCR225-8FP | MCR225-2FP | |
---|---|---|---|---|
Description | Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element | Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220FP, 3 PIN | Silicon Controlled Rectifier, 25A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220FP, 3 PIN | Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
Maker | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
Reach Compliance Code | unknown | unknown | unknown | unknown |
Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
Nominal circuit commutation break time | 15 µs | 15 µs | 15 µs | 15 µs |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
Maximum DC gate trigger current | 40 mA | 40 mA | 40 mA | 40 mA |
Maximum DC gate trigger voltage | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
Maximum holding current | 40 mA | 40 mA | 40 mA | 40 mA |
JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
JESD-609 code | e0 | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 |
Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C |
Minimum operating temperature | -40 °C | -40 °C | -40 °C | -40 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum rms on-state current | 25 A | 25 A | 25 A | 25 A |
Maximum repetitive peak off-state leakage current | 10 µA | 10 µA | 10 µA | 10 µA |
Off-state repetitive peak voltage | 400 V | 800 V | 600 V | 50 V |
Repeated peak reverse voltage | 400 V | 800 V | 600 V | 50 V |
surface mount | NO | NO | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
Trigger device type | SCR | SCR | SCR | SCR |
Maximum leakage current | 2 mA | 2 mA | - | 2 mA |
On-state non-repetitive peak current | 300 A | 300 A | - | 300 A |
Maximum on-state current | 25000 A | 25000 A | - | 25000 A |
package instruction | - | TO-220FP, 3 PIN | TO-220FP, 3 PIN | FLANGE MOUNT, R-PSFM-T3 |