2N7325H datasheet, PDF - EEWORLD Datasheet

2N7325H: Description14A, 200V, 0.315ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA; CategoryDiscrete semiconductor The transistor; File Size100KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2N7325H Overview

14A, 200V, 0.315ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	RADIATION HARDENED
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	14 A
Maximum drain current (ID)	14 A
Maximum drain-source on-resistance	0.315 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	125 W
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	42 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Maximum off time (toff)	936 ns
Maximum opening time (tons)	344 ns
Base Number Matches	1

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