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Datasheet> All Categories > Discrete semiconductor> The transistor> 2N2865LEADFREE
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2N2865LEADFREE

Description
RF Small Signal Bipolar Transistor, 1-Element, Silicon, NPN, TO-72,
CategoryDiscrete semiconductor    The transistor   
File Size33KB，1 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
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2N2865LEADFREE Overview

RF Small Signal Bipolar Transistor, 1-Element, Silicon, NPN, TO-72,

2N2865LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionCYLINDRICAL, O-MBCY-W4
Reach Compliance Codecompli
Collector-based maximum capacity2.5 pF
ConfigurationSINGLE
JEDEC-95 codeTO-72
JESD-30 codeO-MBCY-W4
JESD-609 codee3
Number of components1
Number of terminals4
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN (315)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)600 MHz
Base Number Matches1

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Small Signal NPN Transistors
TO-72 Case
TYPE NO.
DESCRIPTION
VCBO VCEO VEBO ICBO @ VCB
(V)
(V)
(V)
µ
(µA)
MAX
0.001
--
0.01
0.01
0.01
0.01
0.02
0.01
0.02
0.01
15
--
15
90
15
15
1.0
15
15
15
(V)
hFE
@ IC
(mA)
@ VCE
(V)
VCE (SAT) @ IC
(V)
(mA)
fT
(MHz)
Cob
*Ccb
(pF)
MAX
1.7
1.7
1.7
30
1.0*
2.5
1.0*
1.0*
1.0*
1.5*
MIN
2N917
RF/IF OSCILLATOR
30
30
30
100
30
25
30
30
20
30
MIN
15
15
15
60
15
13
15
15
12
15
MIN
3.0
3.0
3.0
15
2.5
3.0
2.0
2.5
2.5
2.5
MIN
20
20
20
MAX
--
200
--
3.0
3.0
3.0
10
3.0
4.0
2.0
3.0
3.0
25
1.0
10
1.0
5.0
1.0
10
8.0
1.0
1.0
1.0
MAX
0.5
--
0.4
1.8
--
0.4
--
--
0.4
--
3.0
--
10
100
--
10
--
--
10
--
MIN
500
600
600
60
1,000
600
750
1,000
900
1,000
2N917A
RF/IF OSCILLATOR
2N918
2N998
2N2857
2N2865
2N3478
2N3839
2N5179
BFY90
RF/IF OSCILLATOR
DARLINGTON
VHF/UHF OSC
RF/IF OSCILLATOR
VHF/UHF LOW NOISE
VHF/UHF AMPL/OSC
VHF/UHF AMPL/OSC
VHF/UHF AMPL/OSC
1,600 8,000
30
20
25
30
25
20
150
200
150
150
250
125
Shaded areas indicate Darlington.
Dual Transistors
TO-71 Case
PD @ TA=25
o
C=360mW Total (Both Die Equal Power)
TYPE NO.
DESCRIPTION
VCBO VCEO VEBO ICBO @ VCB
(V)
(V)
(V)
(nA)
(V)
MIN
CEN741
CEN832
NPN LOW NOISE
PNP LOW NOISE
45
60
MIN
45
60
MIN
6.0
5.0
MAX
10
10
45
50
hFE
MIN
150
150
MAX
600
450
0.01
1.0
5.0
5.0
@ IC @ VCE VCE (SAT) @ IC
(mA) (V)
(V)
(mA)
MAX
0.35
0.25
1.0
1.0
MATCHING
hFE
%
20
20
VBE
(mV)
5.0
5.0
(6-December 2004)
w w w. c e n t r a l s e m i . c o m

2N2865LEADFREE Related Products

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Description RF Small Signal Bipolar Transistor, 1-Element, Silicon, NPN, TO-72, RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, RF Small Signal Bipolar Transistor, 1-Element, Silicon, NPN, TO-72, Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-72, TO-72, 4 PIN RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-72, TO-72, 4 PIN
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
package instruction CYLINDRICAL, O-MBCY-W4 CYLINDRICAL, O-MBCY-W4 CYLINDRICAL, O-MBCY-W4 CYLINDRICAL, O-MBCY-W4 CYLINDRICAL, O-MBCY-W4 CYLINDRICAL, O-MBCY-W4 CYLINDRICAL, O-MBCY-W4
Reach Compliance Code compli compli compli compli compli compli compli
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE DARLINGTON
JEDEC-95 code TO-72 TO-72 TO-72 TO-72 TO-72 TO-72 TO-72
JESD-30 code O-MBCY-W4 O-MBCY-W4 O-MBCY-W4 O-MBCY-W4 O-MBCY-W4 O-MBCY-W4 O-MBCY-W4
JESD-609 code e3 e3 e3 e3 e3 e3 e3
Number of components 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4
Package body material METAL METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO
Terminal surface MATTE TIN (315) MATTE TIN (315) MATTE TIN (315) MATTE TIN (315) MATTE TIN (315) MATTE TIN (315) MATTE TIN (315)
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 10 10 10 10 10 10 10
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 600 MHz 1000 MHz 600 MHz 500 MHz 750 MHz 1000 MHz 60 MHz
Base Number Matches 1 1 1 1 1 1 1
Collector-based maximum capacity 2.5 pF 1 pF 1.7 pF - 1 pF 1 pF -
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER - AMPLIFIER -
Collector-emitter maximum voltage - 15 V - 15 V - 15 V 60 V

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