2N2857LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N2857LEADFREE: DescriptionRF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72,; CategoryDiscrete semiconductor The transistor; File Size33KB，1 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N2857LEADFREE Overview

RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72,

2N2857LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.04 A
Collector-based maximum capacity	1 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
JESD-609 code	e3
Number of components	1
Number of terminals	4
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1000 MHz
Base Number Matches	1

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Small Signal NPN Transistors

TO-72 Case

TYPE NO.

DESCRIPTION

VCBO VCEO VEBO ICBO @ VCB

(V)

(µA)

MAX

0.001

0.01

0.02

0.01

0.02

0.01

1.0

(V)

hFE

@ IC

(mA)

@ VCE

(V)

VCE (SAT) @ IC

(V)

(mA)

(MHz)

Cob

*Ccb

(pF)

MAX

1.7

1.0*

2.5

1.0*

1.5*

MIN

2N917

RF/IF OSCILLATOR

100

MIN

3.0

2.5

3.0

2.0

2.5

MIN

MAX

200

3.0

4.0

2.0

3.0

1.0

5.0

1.0

8.0

1.0

MAX

0.5

0.4

1.8

0.4

3.0

100

MIN

500

600

1,000

600

750

1,000

900

1,000

2N917A

RF/IF OSCILLATOR

2N918

2N998

2N2857

2N2865

2N3478

2N3839

2N5179

BFY90

RF/IF OSCILLATOR

DARLINGTON

VHF/UHF OSC

RF/IF OSCILLATOR

VHF/UHF LOW NOISE

VHF/UHF AMPL/OSC

1,600 8,000

150

200

150

250

125

Shaded areas indicate Darlington.

Dual Transistors

TO-71 Case

PD @ TA=25

C=360mW Total (Both Die Equal Power)

TYPE NO.

DESCRIPTION

VCBO VCEO VEBO ICBO @ VCB

(V)

(nA)

(V)

MIN

CEN741

CEN832

NPN LOW NOISE

PNP LOW NOISE

MIN

6.0

5.0

MAX

hFE

MIN

150

MAX

600

450

0.01

1.0

5.0

@ IC @ VCE VCE (SAT) @ IC

(mA) (V)

(V)

(mA)

MAX

0.35

0.25

1.0

MATCHING

hFE

VBE

(mV)

5.0

(6-December 2004)

w w w. c e n t r a l s e m i . c o m

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Description	RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72,	RF Small Signal Bipolar Transistor, 1-Element, Silicon, NPN, TO-72,	Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-72, TO-72, 4 PIN	RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72,	RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72,	Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-72, TO-72, 4 PIN	RF Small Signal Bipolar Transistor, 1-Element, Silicon, NPN, TO-72,
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	DARLINGTON	SINGLE
JEDEC-95 code	TO-72	TO-72	TO-72	TO-72	TO-72	TO-72	TO-72
JESD-30 code	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4
JESD-609 code	e3	e3	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4	4
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10	10	10	10	10	10
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	1000 MHz	600 MHz	500 MHz	750 MHz	1000 MHz	60 MHz	600 MHz
Base Number Matches	1	1	1	1	1	1	1
Collector-based maximum capacity	1 pF	1.7 pF	-	1 pF	1 pF	-	2.5 pF
Collector-emitter maximum voltage	15 V	-	15 V	-	15 V	60 V	-
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	AMPLIFIER	-	AMPLIFIER

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