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ERA15-02

Description
1 A, 200 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size2MB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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ERA15-02 Overview

1 A, 200 V, SILICON, SIGNAL DIODE

ERA15-01 THRU ERA15-10
PLASTIC SILICON RECTIFIER
50V-1000V 1.0A
FEATURES
l
l
l
l
l
l
l
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
l
l
l
l
l
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res istive or inductive load. For capacitive load,derate by 20%.
ERA15
-01
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
ERA15
-02
200
140
200
ERA15
-04
400
280
400
1.0
ERA15 ERA15 ERA15
UNITS
-06
-08
-10
600
420
600
800
560
800
1000
700
1000
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
40.0
A
Maximum instantaneous f orw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
1.0
5.0
50.0
15
50
- 55---- + 150
- 55---- + 150
V
A
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

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ERA15-02 ERA15-01 ERA15-04 ERA15-06 ERA15-08 ERA15-10
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