HER202G datasheet, PDF - EEWORLD Datasheet

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HER202G: Description2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15; Categorysemiconductor Discrete semiconductor; File Size2MB，2 Pages; ManufacturerTAYCHIPST; Websitehttp://www.taychipst.com

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HER202G Overview

2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15

HER202G Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	PLASTIC PACKAGE-2
state	DISCONTINUED
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
terminal coating	tin lead
Terminal location	AXIAL
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	rectifier diode
application	EFFICIENCY
Phase	1
Maximum reverse recovery time	0.0500 us
Maximum repetitive peak reverse voltage	100 V
Maximum average forward current	2 A
Maximum non-repetitive peak forward current	60 A

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HER201G THRU HER208G

GLASS HIGH EFFICIENCY RECTIFIERS

50V-1000V 2.0A

FEATURES

Low cost

Diffused junction

Ultra fast switching for high efficiency

Low reverse leakage current

Low forward voltage drop

High current capability

The plastic material carries UL recognition 94V-0

MECHANICAL DATA

Case: JEDEC DO-15 molded plastic

Polarity: Color band denotes cathode

Weight: 0.015 ounces , 0.4 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward

Rectified Current

Peak Forward Surage Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load(JEDEC Method)

Peak Forward Voltage at 2.0A DC(Note1)

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@TJ=25

=100

=50

SYMBOL

RRM

RMS

(AV)

HER

201G

HER

202G

100

HER

203G

200

140

200

HER

204G

300

210

300

2.0

HER

205G

400

280

400

HER

206G

600

420

600

HER

207G

800

560

800

HER

208G

1000

700

1000

UNIT

FSM

1.0

5.0

100

-50 to +150

1.3

1.7

Maximum Reverse Recovery Time(Note 1)

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Operating Temperature Range

Storage Temperature Range

NOTES: 1.Measured with I

=0.5A，I

=1A

，I

=0.25A

°C

STG

2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC

3.Thermal resistance junction to ambient

E-mail: sales@taychipst.com

1 of 2

Web Site: www.taychipst.com

HER202G Related Products

	HER202G	HER201G	HER203G	HER204G	HER205G	HER206G	HER207G	HER208G
Description	2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 300 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 800 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15

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