RN2113CT datasheet, PDF - EEWORLD Datasheet

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RN2113CT: DescriptionSwitching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications; CategoryDiscrete semiconductor The transistor; File Size130KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN2113CT Overview

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN2113CT Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	CHIP CARRIER, R-XBCC-N3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR
Shell connection	COLLECTOR
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	300
JESD-30 code	R-XBCC-N3
Number of components	1
Number of terminals	3
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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RN2112CT,RN2113CT

TOSHIBA Transistor

Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)

RN2112CT,RN2113CT

Switching Applications

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

1.0±0.05

Unit: mm

0.6±0.05

0.5±0.03

0.25±0.03

•

Complementary to RN1112CT, RN1113CT

0.25±0.03

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

１

２

0.35±0.02

Equivalent Circuit

0.15±0.03

0.65±0.02

0.05±0.03

•

Incorporating a bias resistor into a transistor reduces parts count.

３

1.BASE

CST3

JEDEC

2.EMITTER

3.COLLECOTR

―

2-1J1A

JEITA

TOSHIBA

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

CBO

CEO

EBO

stg

Rating

−20

−5

−50

150

−55

to 150

Unit

°C

Weight: 0.75 mg (typ.)

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-04-17

0.38 +0.02

-0.03

0.05±0.03

RN2113CT Related Products

	RN2113CT	RN2112CT
Description	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
Maker	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	CHIP CARRIER, R-XBCC-N3	CHIP CARRIER, R-XBCC-N3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.05 A	0.05 A
Collector-emitter maximum voltage	20 V	20 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	300	300
JESD-30 code	R-XBCC-N3	R-XBCC-N3
Number of components	1	1
Number of terminals	3	3
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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