WESTCODE
An
Date:- 10 Jul, 2019
Data Sheet Issue:- 2
IXYS
Company
Fast Symmetrical Gate Turn-Off Thyristor
Type H1200NC25#
Absolute Maximum Ratings
MAXIMUM
LIMITS
2500
2600
100-2000
100-2000
VOLTAGE RATINGS
V
DRM
V
RSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
UNITS
V
V
V
V
RATINGS
I
TGQM
L
s
I
T(AV)M
I
T(RMS)
I
TSM
I
TSM2
I
2
t
di/dt
cr
P
FGM
P
RGM
I
FGM
V
RGM
t
off
t
on
T
jop
T
stg
Maximum peak turn-off current, (note 2)
Snubber loop inductance, I
TM
=I
TGQM
, (note 2)
Mean on-state current, T
sink
=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current t
p
=10ms
Peak non-repetitive surge current, (Note 4)
I
2
t capacity for fusing t
p
=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6).
Minimum permissible off-time, I
TM
=I
TGQM
, (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
MAXIMUM
LIMITS
1200
0.3
670
1340
10.5
19
550
1000
210
8
140
18
80
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
kA
2
s
A/µs
W
kW
A
V
µs
µs
°C
°C
Notes:-
1) V
GK
=-2Volts.
2) T
j
=125°C, V
D
=80%V
DM
, V
DM
<V
DRM
, di
GQ
/dt=20A/µs, C
S
=3µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, t
p
=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
Data Sheet. Type H1200NC25# Issue 2
Page 1 of 15
July, 2019
WESTCODE
An IXYS Company
Characteristics
Parameter
V
TM
I
L
I
H
dv/dt
cr
I
DM
I
RM
I
GKM
Maximum peak on-state voltage
Latching current
Holding current.
Critical rate of rise of off-state voltage
Peak off state current
Peak reverse current
Peak negative gate leakage current
Fast Symmetrical Gate Turn-Off Thyristor type H1200NC25#
MIN
-
-
-
1000
-
-
-
-
TYP
3.0
15
15
-
-
-
-
1.0
0.9
0.8
3.0
0.6
0.06
1.0
3.0
0.8
12
250
1600
40
-
-
-
-
-
480
MAX TEST CONDITIONS
3.3
-
-
-
50
100
200
-
-
-
8.0
2.5
0.5
-
7.0
-
13
-
I
G
=2A, I
T
=1200A
T
j
=25°C
T
j
=25°C
V
D
=80%V
DRM
, V
GR
=-2V
Rated V
DRM
, V
GR
=-2V
Rated V
RRM
V
GR
=-16V
T
j
=-40°C
T
j
=25°C
T
j
=125°C
T
j
=-40°C
T
j
=25°C
T
j
=125°C
V
D
=50%V
DRM
, I
TGQ
=1200A, I
GM
=40A, di
G
/dt=20A/µs
T
j
=25°C, di/dt=300A/µs, (10%I
GM
to 90%V
D
)
Conditions as for t
d
, (10%I
GM
to 10%V
D
)
V
D
=80%V
DRM
, I
TGQ
=1200A, C
S
=3µF,
di
GQ
/dt=40A/µs, V
GR
=-16V, (90%I
TGQ
to 10%IV
D
)
Conditions as for t
f
, (10%I
GQ
to 10%I
TGQ
)
Conditions as for t
f
V
D
=25V, R
L
=25mW
V
D
=25V, R
L
=25mW
UNITS
V
A
A
V/µs
mA
mA
mA
V
V
V
A
A
A
µs
V
GT
Gate trigger voltage
-
-
-
I
GT
Gate trigger current
-
-
t
d
t
gt
t
f
t
gq
I
gq
Q
gq
t
tail
t
gw
Delay time
Turn-on time
Fall time
Turn-off time
Turn-off gate current
Turn-off gate charge
Tail time
Gate off-time (see note 3).
-
-
-
-
-
-
-
150
-
µs
µs
µs
A
µC
µs
µs
K/W
K/W
K/W
kN
g
2000 Conditions as for t
f
60
-
Conditions as for t
f
, (10%I
TGQ
to I
TGQ
<1A)
Conditions as for t
f
0.027 Double side cooled
0.070 Cathode side cooled
0.045 Anode side cooled
25
-
(see note 2)
R
thJK
Thermal resistance junction to sink
-
-
F
W
t
Mounting force
Weight
15
-
Notes:-
1) Unless otherwise indicated T
j
=125
o
C.
2) For other clamping forces, consult factory.
3) The gate off-time is the period during which the gate circuit is
required to remain low impedance to allow for the passage
of tail current.
Data Sheet. Type H1200NC25# Issue 2
Page 2 of 15
July, 2019
WESTCODE
An IXYS Company
Notes on ratings and characteristics.
1. Maximum Ratings.
Fast Symmetrical Gate Turn-Off Thyristor type H1200NC25#
1.1 Off-state voltage ratings.
Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. For
other gate conditions see the curves of figure 5. It should be noted that V
DRM
is the repeatable peak
voltage which may be applied to the device and does not relate to a DC operating condition. While not
given in the ratings, V
DC
should ideally be limited to 60% V
DRM
in this product.
Diagram 1.
1.2 Reverse voltage rating.
All devices in this series have a minimum V
RRM
of 100 Volts. If specified at the time of order, a V
RRM
up to
80%V
DRM
is available.
1.3 Peak turn-off current.
The figure given in maximum ratings is the highest value for normal operation of the device under
conditions given in note 2 of ratings. For other combinations of I
TGQ
, V
D
and C
s
see the curves of figures
15 & 16. The curves are effective over the normal operating range of the device and assume a snubber
circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is
employed then the equivalent C
S
should be used and L
s
<0.3µH must be ensured for the curves to be
applied.
Ls
Ds
R
Cs
Diagram 2.
1.4 R.M.S and average current.
Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° half-
sinewave. These are included as a guide to compare the alternative types of GTO thyristors available,
values can not be applied to practical applications, as they do not include switching losses.
1.5 Surge rating and I
2
t.
Ratings are for half-sinewave, peak value against duration is given in the curve of figure 4.
1.6 Snubber loop inductance.
Use of GTO thyristors with snubber loop inductance, L
s
<0.3µH implies no dangerous V
s
voltages (see
diagrams 2 & 3) can be applied, provided the other conditions given in note 1.3 are enforced.
Alternatively V
s
should be limited to 700 Volts to avoid possible device failure.
Data Sheet. Type H1200NC25# Issue 2
Page 3 of 15
July, 2019
WESTCODE
An IXYS Company
Fast Symmetrical Gate Turn-Off Thyristor type H1200NC25#
1.7 Critical rate of rise of on-state current
The value given is the maximum repetitive rating, but does not imply any specific operating condition. The
high turn-on losses associated with limit di/dt would not allow for practical duty cycle at this maximum
condition. For special pulse applications, such as crowbars and pulse power supplies, a much higher di/dt
is possible. Where the device is required to operate with infrequent high current pulses, with natural
commutation (i.e. not gate turn-off), then di/dt>5kA/µs is possible. For this type of operation individual
specific evaluation is required.
1.8 Gate ratings
The absolute conditions above which the gate may be damaged. It is permitted to allow V
GK(AV)
during
turn-off (see diagram 10) to exceed V
RGM
which is the implied DC condition.
1.9 Minimum permissible off time.
This time relates specifically to re-firing of device (see also note on gate-off time 2.7). The value given in
the ratings applies only to operating conditions of ratings note 2. For other operating conditions see the
curves of figure 18.
1.10 Minimum permissible on-time.
Figure is given for minimum time to allow complete conduction of all the GTO thyristor islands. Where a
simple snubber, of the form given in diagram 1. (or any other non-energy recovery type which discharges
through the GTO at turn-on) the actual minimum on-time will usually be fixed by the snubber circuit time
constant, which must be allowed to fully discharge before the GTO thyristor is turned off. If the anode
circuit has di/dt<10A/µs then the minimum on-time should be increased, the actual value will depend
upon the di/dt and operating conditions (each case needs to be assessed on an individual basis).
Data Sheet. Type H1200NC25# Issue 2
Page 4 of 15
July, 2019
WESTCODE
An IXYS Company
2 Characteristics
Fast Symmetrical Gate Turn-Off Thyristor type H1200NC25#
2.1 Instantaneous on-state voltage
Measured using a 500µs square pulse, see also the curves of figure 2 for other values of I
TM
.
2.2 Latching and holding current
These are considered to be approximately equal and only the latching current is measured, type test only
as outlined below. The test circuit and wave diagrams are given in diagram 4. The anode current is
monitored on an oscilloscope while V
D
is increased, until the current is seen to flow during the un-gated
period between the end of I
G
and the application of reverse gate voltage. Test frequency is 100Hz with
I
GM
& I
G
as for t
d
of characteristic data.
I
GM
I
G
100µs
Gate current
15V
100µs
R1
Unlatched
Anode current
unlatched condition
CT
C1
DUT
Gate-drive
Vs
Anode current
Latched condition
Latched
Diagram 4, Latching test circuit and waveforms.
2.3 Critical dv/dt
The gate conditions are the same as for 1.1, this characteristic is for off-state only and does not relate to
dv/dt at turn-off. The measurement, type test only, is conducted using the exponential ramp method as
shown in diagram 5. It should be noted that GTO thyristors have a poor static dv/dt capability if the gate
is open circuit or R
GK
is high impedance. Typical values: - dv/dt<30V/µs for R
GK
>10W.
Diagram 5, Definition of dV/dt.
2.4 Off-state leakage.
For I
DRM
& I
RRM
see notes 1.1 & 1.2 for gate leakage I
GK
, the off-state gate circuit is required to sink this
leakage and still maintain minimum of –2 Volts. See diagram 6.
Diagram 6.
Data Sheet. Type H1200NC25# Issue 2
Page 5 of 15
July, 2019
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