Preliminary
GaN Power Amp Pallet
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 52.5W typical P
AVG
RTP08050-10
Application
• CDMA DPD amplifier
• LTE application
Description
This HPA Module is a high gain and Amplifier module for CDMA and LTE Repeater use.
Electrical Specifications @ VDD= 31V, 50Ω System
PARAMETER
Frequency Range
Operating Bandwidth within BW
Average Output Power
Peak Output Power
ACLR (LTE 1FA 10MHz)
@ Po=+47.2dBm Avg.
Symbol
BW
OBW
Pout
Psat
Non-DPD
ACLR
With-DPD
Specification
869 ~ 894MHz
5 ~ 25MHz
47.2dBm(52.5W) Avg. @ LTE 1FA 10MHz
54.8dBm (Min.) @ Duty 10% Pulse
-27dBc(Min) @ ±10MHz
-53dBc(Min) @ ±10MHz
-25dBc(Min) @ ±750KHz
-27dBc(Min) @ ±1.98MHz
-50dBc(Min) @ ±750KHz
-55dBc(Min) @ ±1.98MHz
57dB (Min.)
2.0 dB(Peak to peak) @ Operating Frequency
-12dB (Max.)
-17dB (Max.)
+5.6V & +31V
0.2A @ 5.6V (Typ.)
4.2A @ 31V (Typ.)
40% @ 31V (Typ.)
+5dBm ± 1.5dBm
0.9V @ 40℃
@-30 ~ +65°C
@ 31V
With-DPD
@ CFR 7.0dB
@-30 ~ +65°C
@ 31V
@ CFR 7.5dB
Non-DPD
ACPR (CDMA 20FA)
@ Po=+47.2dBm Avg.
ACPR
RF Gain @ 25℃
Gain Flatness
Input Return Loss
Output Return Loss
Normal Operating Voltage
Current Consumption
Efficiency
Feedback Output level @ 47.2dBm
Temp Detector
G
ΔG
S11
S22
VDC
IDD
Eff
FB
T
▪
Tel : 82-31-250-5078
▪
rfsales@rfhic.com
▪
All specifications may change without notice.
▪
Version 1.0
Preliminary
GaN Power Amp Pallet
Environmental Characteristics
Parameter
Operating Ambient Temperature
Storage Temperature
Relative humidity w/o condensation
Symbol
Ta
Tstg
RH
RTP08050-10
Min.
-30
-40
Typ.
Max.
+65
+130
80
Unit
°C
°C
%
Maximum Rating
Input Overdrive
Load VSWR
Operating Case Temperature
P
OD
Ψ
Tc
-2dBm
∞
: 1 (All Phase & Amplitude)
+100
Max.
Nom.
°C
Interface Connector
8-Pin-Control ( MOLEX_5267_08 )
Pin #
1
2
3
4
5
6
7
8
Description
Vcc
Vcc
Vcc
Vcc
GND
GND
GND
GND
Specifications
+5.6V
+31V
+31V
+31V
GROUND
GROUND
GROUND
GROUND
4Pin-Control ( SMW200-04P, Yeonho )
Pin #
1
2
3
4
Description
Enable / Disable
GND
GND
Temp DET
Specifications
Amp Enable(+5.6V) / Amp Disable(+0V)
GROUND
GROUND
Temp Sense (0.9V @ 40℃)
▪
Tel : 82-31-250-5078
▪
rfsales@rfhic.com
▪
All specifications may change without notice.
▪
Version 1.0
Preliminary
GaN Power Amp Pallet
Mechanical Specifications
Parameter
Dimensions
Weight
RF Input Connector
RF Output Coupling Connector
RF Output Connector
I/O Connector
Cooling
RTP08050-10
Value
185 x 125 x 18.8
0.75(max)
SMA(Female)
SMA(Female)
SMA(Female)
SMW200 4pin(Male)
Molex 8pin(Male)
External Heat-sink
Units
mm
Kg
Limits
Outline Drawing
COVER (T=11.7)
GASKET (T=0.3)
PCB (T=0.8)
FLANGE (T=6.0)
4
1
I/O
1
2
3
4
Enable
GND
GND
Temp DET
1
I/O
8
1
2
3
4
5
6
7
8
+5.6V
+31V
+31V
+31V
GND
GND
GND
GND
INPUT
FB
CAUTION
WHEN THE CASE IS OPEN
THIS DEVICE IS SUSCEPTIBLE
TO DAMAGE FROM E.S.D OR E.M.I
OUTPUT
(0,0)
Unit : mm
*Note :
Connector positions and module
mount holes may be subjected
change.
▪
Tel : 82-31-250-5078
▪
rfsales@rfhic.com
▪
All specifications may change without notice.
▪
Version 1.0
Preliminary
GaN Power Amp Pallet
RTP08050-10
RTP08050-10 Budget
▪
Tel : 82-31-250-5078
▪
rfsales@rfhic.com
▪
All specifications may change without notice.
▪
Version 1.0
Preliminary
GaN Power Amp Pallet
RTP08050-10
Test Data (Test Results: DPD Operation)
Test Equipments
-
-
-
-
-
-
-
-
DPD Engine : Optichron OP6180 Board
Signal Generator : E4438C (Agilent)
Spectrum Analyzer : E4440A (Agilent)
Network Analyzer : 8753ES (Agilent)
Power Supply : 6674A (Agilent)
Signal : LTE 1FA 10MHz(PAPR 7.5dB) & WCDMA 4FA(PAPR 7dB)
CFR apply
AMP Temperature: 40°C
Gain & Input VSWR
Output VSWR
Test Condition
●
●
●
Output Power @ LTE 1FA 10MHz
▪
Tel : 82-31-250-5078
▪
rfsales@rfhic.com
▪
All specifications may change without notice.
▪
Version 1.0
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